Fin-Shaped Semiconductor Device With Insulator Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices with three-dimensional channels face challenges in scaling and controlling current effectively due to the short channel effect, which affects the electric potential of the channel region and requires improved manufacturing methods for fin-shaped active patterns and gate structures.
Innovation Solution
The semiconductor device features a substrate with multiple fins and insulator patterns, where gate electrodes and dummy gate electrodes are strategically positioned to control current flow, with insulator patterns having specific cross-sectional shapes to optimize channel formation and reduce the short channel effect, and the method involves forming these structures through a series of etching and deposition processes to achieve precise alignment and height control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If three-dimensional channel transistors are used for scaling, then device density is improved, but short channel effect worsens and affects electric potential control
Solution Approach 1:
The patent transitions from planar two-dimensional channels to three-dimensional fin-shaped channels that extend vertically from the substrate. This dimensional change increases the effective channel area and device density while maintaining controllability through gate structures that wrap around the fin surfaces, addressing both the density improvement and potential short channel effects
Solution Approach 2:
The channel region is segmented into multiple fin structures rather than a single planar channel. Each fin acts as an independent channel segment with its own gate control, allowing better electrostatic control over the channel potential and reducing short channel effects while collectively providing high device density
2Reliability
If fin-shaped active patterns are formed to improve current control, then manufacturing complexity increases
Solution Approach 1:
The fin-shaped active patterns are formed as preliminary structures before gate electrode formation. The fins are created through substrate patterning and etching processes prior to depositing the gate materials, establishing the three-dimensional channel geometry in advance to enable better current control throughout subsequent manufacturing steps
Solution Approach 2:
The gate electrodes are formed to extend along and wrap around the sidewalls of the fin structures, with the gate material nested around the fin channel. This nested configuration provides superior current control by enclosing the channel from multiple sides while the fabrication processes remain integrated and sequential
Data Source
AI summary
Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.