Fin-Shaped Semiconductor Structure With Curved Sidewalls for Deep Trenches
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Solution Overview
Problem
The manufacturing yield of capacitor structures is affected by the shape of trenches in high dielectric constant deep trench capacitors, which can lead to issues such as cracks and inadequate layer formation due to protruding top corners of fin-shaped structures.
Innovation Solution
A manufacturing method involving oxidation and removal processes is applied to adjust the shape of fin-shaped structures between trenches, converting protruding top corners into curved sidewalls to improve the shape compatibility with subsequent material layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the fin-shaped structure is formed by conventional patterning, then the top corner protrudes outwards, but this causes cracks and inadequate layer formation in subsequent capacitor structures
Solution Approach 1:
The invention performs preliminary actions by forming a mandrel structure with rounded corners before depositing the fin-shaped structure. This pre-shaping of the underlying mandrel ensures that the subsequent fin structure inherits the rounded geometry, preventing corner protrusions that would cause cracking in capacitor layers.
Solution Approach 2:
The invention applies preliminary anti-action by intentionally designing the mandrel with rounded corners to counteract the natural tendency of conventional patterning to create sharp protruding corners. This pre-countermeasuring approach prevents the harmful effect of corner protrusions before they can affect the capacitor structure formation.
2Device complexity
If the top corner of the fin-shaped structure protrudes outwards, then the patterning is simpler, but the shape is incompatible with subsequent material layers causing manufacturing yield issues
Solution Approach 1:
The invention applies spheroidality by replacing sharp corners with curved surfaces. The mandrel structure is designed with rounded corners, and this curvature is transferred to the fin-shaped structure, creating a smooth transition that is compatible with subsequent material layer deposition and eliminates stress concentration points.
Solution Approach 2:
The invention applies local quality by modifying only the corner regions of the fin-shaped structure while maintaining the overall fin geometry. The rounded corners provide localized geometric adjustment that improves compatibility with capacitor structures without changing the fundamental patterning approach or fin structure dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances manufacturing yield by reducing the negative influence of the fin-shaped structure shape on subsequent material layers, ensuring stable and consistent formation of capacitor structures.
Implementation Method 1
An oxidation process is performed to the first fin-shaped structure, and a part of the first fin-shaped structure is oxidized to be an oxide layer by the oxidation process
Data Source
AI summary
A manufacturing method of a semiconductor structure includes the following steps. A silicon substrate is provided, and a patterning process is performed to the silicon substrate for forming first trenches in the silicon substrate. A part of the silicon substrate is patterned to be a first fin-shaped structure located between two of the first trenches adjacent to each other in a horizontal direction by the patterning process, and a top corner of the first fin-shaped structure protrudes outwards in the horizontal direction. An oxidation process is performed to the first fin-shaped structure, and a part of the first fin-shaped structure is oxidized to be an oxide layer by the oxidation process. A removing process is performed for removing the oxide layer, and the top corner of the first fin-shaped structure becomes a curved sidewall via the oxidation process and the removing process.