Fin Tunnel FET Segmented Doping for Leakage Control
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Solution Overview
Problem
Current fin tunnel field effect transistors face challenges in efficiently controlling current flow and minimizing leakage current between the source and drain regions, particularly when the gate voltage is not applied.
Innovation Solution
The formation of a fin tunnel field effect transistor involves creating a seed region and a first type region with a specific doping, followed by a second type region with opposite doping, along with a gate insulator and gate electrode, and optionally a barrier region to inhibit leakage current. This structure allows for controlled current flow between the source and drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a conventional fin FET structure is used, then current flow control is simplified, but leakage current between source and drain regions increases
Solution Approach 1:
The channel region is segmented into multiple sections with different doping types (first type region and second type region) to create distinct current flow paths. This segmentation allows the first type region to conduct current while the second type region blocks leakage current, resolving the contradiction between current flow control and leakage prevention.
Solution Approach 2:
Different regions of the channel are assigned different doping characteristics (n-type vs p-type) to create localized functional zones. The first type region provides high conductivity for current flow, while the second type region provides insulation properties to prevent leakage, allowing each local region to optimize its function.
2Power
If doping concentration is increased to improve current flow, then on-state current increases, but off-state leakage current also increases
Solution Approach 1:
Instead of using uniform high doping to increase current flow (which also increases leakage), the invention inverts the approach by using alternating doped and undoped regions. The doped regions provide current flow paths while the undoped regions act as barriers to leakage, achieving high current flow without proportional increase in leakage.
Solution Approach 2:
The undoped channel regions act as intermediary elements between the doped source/drain regions. These intermediary undoped regions prevent direct electrical connection that would cause leakage, while still allowing controlled current flow when gate voltage is applied, thus mediating between the need for high current and low leakage.
3Object-generated harmful factors
If channel width is reduced to minimize leakage, then leakage current decreases, but current flow capability also decreases
Solution Approach 1:
The invention transitions from controlling current flow solely through channel width (one dimension) to utilizing the vertical dimension through alternating doped/undoped layers. This dimensional change allows leakage prevention through vertical undoped barriers while maintaining horizontal current flow paths through doped regions, decoupling the trade-off between leakage and current flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective current flow between the source and drain regions when the gate voltage is applied, while minimizing leakage current in the off state, thereby improving the transistor's switching performance.
Implementation Method 1
current flows between a source region and a drain region of the device, through a channel region of the device, upon application of a sufficient voltage or bias to a gate of the device
Implementation Method 2
forming a fin tunnel field effect transistor involves creating a seed region and a first type region with a specific doping, followed by a second type region with opposite doping
Data Source
AI summary
A fin tunnel field effect transistor includes a seed region and a first type region disposed above the seed region. The first type region includes a first doping. The fin tunnel field effect transistor includes a second type region disposed above the first type region. The second type region includes a second doping that is opposite the first doping. The fin tunnel field effect transistor includes a gate insulator disposed above the second type region and a gate electrode disposed above the gate insulator. A method for forming an example fin tunnel field effect transistor is provided.