Fine Pattern Composition for Semiconductor Resist Processing
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Solution Overview
Problem
In semiconductor manufacturing, forming fine resist patterns with high aspect ratios and uniformity is challenging, especially for thick-film resist patterns, due to issues like pattern dissolution and defects, which limits the ability to achieve high size reduction rates beyond the wavelength limit of conventional exposure methods.
Innovation Solution
A composition comprising vinyl resin, a specific amine compound with a cage-type structure, and a solvent is applied to resist patterns, followed by a mixing bake to form an insolubilized layer, which is then partially removed to create a fine pattern with improved embedding properties and reduced defects, allowing for high aspect ratio patterns to be formed up to the resolution limit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography with short wavelength light is used, then finer pattern resolution is achieved, but manufacturing cost increases significantly
Solution Approach 1:
The invention applies a fine pattern-forming composition containing vinyl resin and amine compound to the resist pattern before final pattern formation. This preliminary action modifies the resist pattern surface to enable finer pattern definition during subsequent processing, achieving high resolution without requiring expensive short wavelength light sources
Solution Approach 2:
The invention changes the chemical parameters of the resist pattern by introducing specific vinyl resin and amine compound components. This chemical modification alters the pattern formation characteristics, enabling finer resolution to be achieved with conventional light sources, thereby reducing manufacturing cost while maintaining high precision
2Reliability
If thick-film resist patterns are formed to achieve high aspect ratio, then ion implantation effectiveness is improved, but pattern dissolution and uniformity defects occur
Solution Approach 1:
The invention uses a composite fine pattern-forming composition containing vinyl resin, amine compound, and other additives. This composite material provides both the thickness needed for high aspect ratio patterns and the chemical stability to prevent dissolution, maintaining pattern uniformity while achieving reliable ion implantation
Solution Approach 2:
The vinyl resin and amine compound components in the fine pattern-forming composition serve as sacrificial elements that facilitate pattern formation and then can be selectively removed. This allows thick-film patterns to be formed with controlled dissolution characteristics, preventing unwanted pattern degradation while maintaining structural integrity for ion implantation
3Manufacturing precision
If size reduction rate is increased beyond wavelength limit, then finer patterns are achieved, but pattern dissolution and defects increase
Solution Approach 1:
The fine pattern-forming composition acts as an intermediary layer between the resist pattern and the final pattern structure. The vinyl resin and amine compound in this intermediary layer enable precise size reduction beyond the wavelength limit while protecting against pattern dissolution and reducing defects through controlled chemical interactions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the precise formation of fine resist patterns with high size reduction rates and reduced defects, effectively overcoming the limitations of conventional techniques, enabling the production of fine patterns suitable for advanced semiconductor devices.
Implementation Method 1
a mixing bake of the resist pattern and the composition layer to form an insolubilized layer in the composition layer
Data Source
AI summary
[Problem] To provide a composition for forming a fine pattern having a good pattern shape even after being applied to a thick-film resist, a high size reduction rate and less defects, as well as a method for forming a fine pattern using the same.[Means for Solution] A composition comprising vinyl resin, an amine compound having a specific cage-type three-dimensional structure and a solvent, and a method for forming a fine pattern using the same.