Fine Pattern Formation via Partition and Spacer Structures
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Solution Overview
Problem
The existing spacer patterning technology (SPT) faces challenges in forming fine patterns with a pad portion and a line portion of different widths, leading to overlay errors and electrical disconnection issues, as well as difficulties in accurately controlling the critical dimension of the pad pattern.
Innovation Solution
A method involving the formation of a partition with specific open regions and line portions, followed by the creation of spacers with loop and connection portions, which allows for the transfer of a target pattern to fill exposed regions, including pad block portions, to achieve accurate and aligned fine patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If spacer patterning technology is used to form line/space patterns, then fine patterns with nano-scale critical dimension can be formed, but it becomes difficult to form pad patterns with different widths together with line patterns
Solution Approach 1:
The partition structure is segmented into multiple functional portions: a partition block portion for defining pad regions, and partition line portions for defining line regions. This segmentation allows different pattern types (pad and line) to be formed simultaneously through a single spacer patterning process, resolving the contradiction between precision and versatility.
Solution Approach 2:
Different regions of the partition structure are given different local qualities: the partition block portion has a width suitable for defining pad patterns, while the partition line portions have widths suitable for defining line patterns. This local differentiation enables the formation of both pad and line patterns with appropriate dimensions using the same spacer patterning technique.
2Adaptability or versatility
If an additional lithography process is used to form pad patterns after line/space patterns, then pad patterns can be formed, but overlay errors occur between line/space patterns and pad patterns
Solution Approach 1:
The invention merges the formation of pad patterns and line patterns into a single spacer patterning process. By using a partition structure with both block and line portions, both pattern types are formed simultaneously in one process step, eliminating the need for additional lithography processes and thus preventing overlay errors.
Solution Approach 2:
The partition structure is preliminarily formed with specific geometric features (block portions and line portions) that predefine the locations and dimensions of both pad and line patterns. This preliminary structuring ensures that subsequent spacer formation automatically produces both pattern types with correct alignment, avoiding overlay issues that would arise from sequential processing.
3Adaptability or versatility
If lithography process is used to form pad pattern, then pad pattern can be formed, but accurate control of critical dimension of pad pattern becomes difficult
Solution Approach 1:
The spacer structure self-determines the critical dimensions of both pad and line patterns through its geometric relationship with the partition structure. The spacer width is uniformly controlled by the spacer patterning process, and this same width automatically defines the dimensions of both pad and line patterns, ensuring consistent and accurate critical dimension control without requiring separate lithography processes.
Data Source
AI summary
A method of forming fine patterns includes forming a partition on a base layer. The partition includes a partition block, a first open region provided to face the partition block, and first lines extending from the partition block to the first open region. A spacer is formed on sidewalls of the partition to define a second open region overlapping with the first open region and to include second lines on sidewalls of the first lines. The partition may be removed to open a third open region occupied by the partition block and spaces between the second lines. A target pattern is formed to include third lines filling the spaces between the second lines, a first pad block filling the second open region, and a second pad block filling the third open region. Each of the first and second pad blocks is separated into a plurality of pads.