FinFET DDB and SDB Integration for Channel Stress Control
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Solution Overview
Problem
Current FinFET fabrication methods face challenges in integrating single diffusion break (SDB) structures and metal gate fabrication, which affect the performance and control of channel regions in semiconductor devices.
Innovation Solution
A semiconductor device is fabricated with a substrate having fin-shaped structures divided by a double diffusion break (DDB) structure on the NMOS region and a single diffusion break (SDB) structure on the PMOS region, using low-stress silicon oxycarbonitride (SiOCN) dielectric layers and specific gate structures to enhance current performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If single diffusion break (SDB) structure is integrated into FinFET fabrication, then channel region control is improved, but integration with metal gate fabrication remains problematic
Solution Approach 1:
The fin-shaped structure is divided into multiple segments by the SDB structure, creating distinct channel regions with different stress characteristics. This segmentation allows independent optimization of NMOS and PMOS devices within the same FinFET architecture, improving channel control while maintaining fabrication compatibility.
Solution Approach 2:
The SDB structure introduces localized stress modulation at specific positions within the fin structure. By creating regions with different stress states (tensile for NMOS, compressive for PMOS), the local quality of the channel region is enhanced, enabling better carrier mobility and threshold voltage control without affecting the entire device structure.
2Reliability
If DDB structure is used to divide fin-shaped structure, then on/off current performance is improved, but device structure becomes more complex
Solution Approach 1:
The double diffusion break (DDB) structure divides the fin-shaped structure into multiple discrete segments, creating well-defined source and drain regions separated by controlled channel portions. This segmentation enhances the on/off current ratio by improving the sharpness of the channel cutoff while maintaining a systematic structure that can be integrated into existing FinFET fabrication flows.
Data Source
AI summary
A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.