FinFET Semiconductor Devices With Dummy Gate Isolation
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Solution Overview
Problem
Current semiconductor devices face challenges in scaling and reducing short channel effects in multi-gate transistors, which affect electrical potential and current control.
Innovation Solution
The semiconductor device design includes fins protruding from a substrate with multiple gate structures and a dummy gate structure, featuring a capping layer, inner and outer spacers, and a dielectric layer to create a recess region for improved isolation and current control, allowing for effective scaling and reduced short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate transistors are used to improve current control and reduce short channel effects, then device performance is improved, but device complexity increases
Solution Approach 1:
The device is segmented into multiple functional regions including first and second gate structures, source/drain regions, recess regions, and device isolation regions. Each segment performs a specific function, allowing complex multi-gate control to be achieved through modular organization rather than a monolithic complex structure.
Solution Approach 2:
The patent introduces a third dimension by creating fins that protrude from the substrate and extending gate structures that wrap around these fins. This three-dimensional configuration enables multi-gate control without proportionally increasing planar footprint, effectively managing complexity through spatial optimization.
2Reliability
If gate length is increased to reduce short channel effects, then electrical potential control is improved, but device scaling is limited
Solution Approach 1:
Instead of relying solely on increased gate length in the planar dimension, the patent utilizes vertical fins and multi-gate configurations that wrap around the fin structures. This three-dimensional approach provides enhanced electrical potential control without increasing the lateral gate length, thereby maintaining device scaling capability.
Solution Approach 2:
The gate structures are nested around the fin regions, with first and second gate structures positioned at different locations along the fin. This nested configuration provides multiple control points for electrical potential without requiring proportional increases in overall device dimensions, enabling both control and scaling.
3Reliability
If device isolation structures are added to improve current control, then transistor performance is improved, but manufacturing complexity increases
Solution Approach 1:
The device isolation structures are merged with the overall device architecture, where the same spacer and insulating layer processes used for gate formation are also employed for creating isolation regions. This integration reduces the need for separate manufacturing steps, thereby improving ease of manufacture while maintaining performance benefits.
Solution Approach 2:
The spacers and insulating layers serve multiple functions: they act as gate structures for current control, as isolation structures for electrical separation, and as alignment references for subsequent processing steps. This multi-functionality reduces manufacturing complexity by eliminating the need for dedicated structures for each function.
Data Source
AI summary
A semiconductor device includes a fin protruding from a substrate and extending in a first direction, source/drain regions on the fin, a recess between the source/drain regions, a device isolation region including a capping layer extending along an inner surface of the recess and a device isolating layer on the capping layer to fill the recess, a dummy gate structure on the device isolation region and including a dummy gate insulating layer, outer spacers on opposite sidewalls of the dummy gate structure, first inner spacers between the dummy gate structure and the outer spacers, and a second inner spacer between the device isolation region and the dummy gate insulating layer.