Semiconductor Devices TRIZ Cases

A lattice-patterned resin sheet with phosphor portions adheres to light-emitting elements during heating and curing.

A germanium PIN photodiode structure uses hydrogen ion implantation to form a buried layer that minimizes dark current.

An intermediate region in a reverse conducting IGBT creates a voltage drop that suppresses gate interference and stabilizes forward voltage.

Segmented semiconductor fins in a multigate LDMOS structure increase breakdown voltage by controlling current flow and reducing transistor lifetime risks.

Connecting trenches merge isolated regions to disperse electric field intensity, increasing breakdown voltage and reducing reverse leakage current.

Segmented p-type base regions in a silicon carbide MOSFET lower ON resistance while maintaining stability in low current regions.

A diffusion suppression layer isolates the barrier layer from p-type dopants in a GaN FET structure.

Tip-side electrodes on nanowires separated by air gaps reduce photon absorption by insulators, boosting power conversion efficiency.

A layered AlGaInN protective layer improves crystallinity and carrier confinement in group III nitride light-emitting devices.

Atomic layer deposition forms a hydroxyl film on bonding surfaces to join light emitting elements and optical parts without heating.

A reflective potting compound surrounds an optoelectronic semiconductor chip to redirect emitted radiation.

Segmenting parallel JFETs from a series MOSFET resolves the trade-off between high breakdown voltage and low on-state resistance in semiconductor devices.

Recessed mesas with self-aligned contacts reduce drain-to-source on-resistance by eliminating alignment errors at sub-micrometer pitches.

A nitride middle layer blocks metal ion diffusion between the N-type semiconductor and electrode.

A GaN semiconductor device uses a p-type resurf layer to alleviate lateral electric fields.

Integrating a ferroelectric layer between the insulator and metal reduces threshold voltage, increasing on-current while suppressing gate-induced drain leakage.

A carbon diffusion barrier surrounding heavy body regions inhibits lateral dopant migration, reducing contact resistance and stabilizing threshold voltage.

A nitride semiconductor gate structure uses a ridge portion and strip-shaped insulator to position the gate electrode away from crystal defects.

A Group III nitride semiconductor light-emitting device reduces driving voltage by steeply increasing magnesium concentration in the p-type layer.

An inclined side surface on a rectangular gallium nitride chip expands the extraction area, resolving low light output from opaque electrode coverage.

A light-emitting device structure uses a light-blocking layer to contain stray light between the emitting surface and transmissive member.

Bisurea additives resolve the contradiction between complete via filling and excessive dimple formation on planar surfaces.

Segmented base layers with varying impurity concentrations confine current filaments and prevent parasitic transistor activation in IGBTs.

Encapsulating semiconductor wires enables precise anisotropic etching, preventing underlying layer damage during local removal.

A gallium nitride high electron mobility transistor uses trapezoid gate feet to distribute current across two-dimensional electron gas channels.

Double epitaxial structure with trench electrodes mitigates electric field distortion to increase breakdown voltage and reduce conductance resistance.

Graded inside VLD region prevents high curvature PN junctions, eliminating field concentration and enhancing withstand voltage reliability.

A gallium nitride field effect transistor uses self-aligned gates and L-shaped contacts to reduce source-drain spacing.

Segmented electrode architecture with insulating layers resolves thermal management bottlenecks while ensuring electrical isolation between cathode and anode.

Multilayer gate spacers with selective dielectric layers prevent etch damage to vertical semiconductor fins during FinFET fabrication.

Mitigation regions penetrate semiconductor wells to increase breakdown voltage, preventing electrical punch-through between conductivity type wells.

A vertical nitride semiconductor transistor uses a multi-layer gate insulating film with charge traps to adjust threshold voltage.

Germanium implantation into the interlayer insulating layer modifies trench width profiles to suppress short channel effects without increasing gate length.

A light-emitting device uses a variable light absorbing layer containing metal oxide particles to adjust optical output.

A GaN HEMT structure uses an n-type doped AlGaN electron donor layer on mesa sidewalls to increase electron concentration at the contact interface.

A strain buffer layer with optimized indium content relieves lattice mismatch to enhance internal quantum efficiency.

An epitaxial semiconductor film in a recess channel maintains uniform dopant concentration, suppressing short channel effects and punchthrough degradation.

Conductive pedestals on LED contacts enable uniform wafer-level phosphor coating, exposing pads for wire bonding without alignment.

Dual metal layers in a FinFET gate optimize transconductance and reduce hot carrier injection for improved RF performance.

Distinct trench sidewall angles mitigate electric field concentration at the bottom, preventing gate oxide thinning while maintaining high channel mobility.

Segmented gate electrode reduces opposing area in trench structure, lowering input charge while maintaining switching speed.

A multi-layer contact configuration uses a reflective metallic layer to redirect trapped light within an optoelectronic device.

An optoelectronic device integrates a reflector and textured surface to enhance light extraction while reducing absorption by electrodes.

A three-dimensional planar capacitor structure reduces occupied area while maintaining effective capacitance in semiconductor devices.

A display device uses distributed Bragg reflector insulating layers to enhance light emission efficiency.

An extension region merges with the base contact in a lateral bipolar junction transistor, reducing base resistance while maintaining CMOS compatibility.

Dummy gate structures with inner and outer spacers create recesses in fin-based devices, reducing short channel effects while maintaining scaling.

Trace amines suppress hydrogen bubbling during indium deposition, ensuring smooth surface morphology on semiconductor substrates.

Extending the drain electrode onto the substrate side surface creates a Schottky contact that reduces leakage current and enhances reverse breakdown voltage.

A channel backside passivation layer protects the buffer layer surface in FinFET structures.