Germanium-Implanted Interlayer Insulating Layer for Gate Profile Control
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Solution Overview
Problem
Current semiconductor technologies face challenges in enhancing device density and controlling short channel effects in multigate transistors, particularly in adjusting gate electrode and spacer profiles effectively.
Innovation Solution
The introduction of a semiconductor device and method involving the implantation or doping of an element semiconductor material, such as germanium, into an interlayer insulating layer to adjust the profiles of gate electrodes and spacers, allowing for controlled trench widths and stress characteristics, thereby improving device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If germanium is implanted into the interlayer insulating layer, then the trench width profile and stress characteristics are adjusted, but the manufacturing process complexity increases
Solution Approach 1:
Germanium is implanted into the interlayer insulating layer before gate electrode formation, so that the trench width profile and stress characteristics are pre-adjusted. This preliminary action eliminates the need for subsequent profile adjustment steps, reducing overall manufacturing complexity while achieving precise trench width control.
Solution Approach 2:
The implantation of germanium changes the physical and chemical parameters of the interlayer insulating layer, including its stress characteristics and etch selectivity. These parameter changes enable precise control of trench width profiles during subsequent processing steps without requiring additional manufacturing operations.
2Reliability
If the gate length is increased to suppress short channel effects, then the current control capability improves, but the device scaling is hindered
Solution Approach 1:
Stress is locally introduced into the channel region through germanium-implanted interlayer insulating layer, creating non-uniform stress distribution that suppresses short channel effects. This allows maintaining short gate lengths for scaling while achieving effective SCE suppression through localized stress engineering rather than increasing overall gate length.
Solution Approach 2:
The stress state parameter in the channel region is changed through germanium implantation in the interlayer insulating layer. This parameter change enables short channel effect suppression without requiring increased gate length, allowing continued device scaling while maintaining reliability.
3Productivity
If the gate electrode profile is adjusted to improve current control, then the device performance enhances, but the manufacturing precision requirements increase
Solution Approach 1:
The interlayer insulating layer with germanium implantation self-adjusts the gate electrode profile through stress-induced effects during standard processing. This self-service mechanism achieves improved current control capability without requiring additional precision control steps, maintaining manufacturing precision while enhancing device performance.
Solution Approach 2:
The stress parameter in the interlayer insulating layer is changed through germanium implantation, which in turn modifies the gate electrode profile parameters during formation. This parameter coupling enables improved current control capability while using standard manufacturing precision, as the profile adjustment is driven by material properties rather than precision processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective suppression of short channel effects and enhances current control capabilities without increasing gate length, facilitating easier scaling and improved semiconductor device performance.
Implementation Method 1
an interlayer insulating layer on the substrate, which surrounds the gate spacer, the interlayer insulating layer including a first portion having germanium
Implementation Method 2
Such multigate transistor tends to have an enhanced current control capability without increasing the gate length of the multigate transistor. Thus, short channel effect (SCE), which is the phenomenon that the electric potential of the channel region is influenced by the drain voltage, can be effectively suppressed.
Data Source
AI summary
A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.