GaN Semiconductor Device With Resurf Layer For Breakdown Voltage
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Solution Overview
Problem
Semiconductor devices, such as switching devices and diodes, face a trade-off between breakdown voltage and on-resistance, with silicon nearing its performance limits, necessitating the use of wide bandgap materials like GaN or SiC to enhance breakdown voltage and reduce on-resistance.
Innovation Solution
A semiconductor device structure incorporating a first GaN based semiconductor layer, a second GaN based semiconductor layer with a larger bandgap, and a p-type GaN based resurf layer to alleviate lateral electric fields, thereby increasing breakdown voltage and reducing on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon is used as the semiconductor material, then manufacturing cost and ease of manufacture are maintained, but breakdown voltage is limited and on-resistance cannot be sufficiently reduced
Solution Approach 1:
The patent changes the material parameter from silicon to GaN-based semiconductor with wider bandgap, fundamentally altering the electrical characteristics to achieve higher breakdown voltage and lower on-resistance while maintaining compatibility with existing manufacturing processes
Solution Approach 2:
The patent employs a composite structure with multiple GaN-based semiconductor layers having different bandgaps and doping types (n-type, p-type), creating a heterogeneous material system that optimizes both breakdown voltage and on-resistance performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves high breakdown voltage and low on-resistance by effectively alleviating lateral electric fields, improving performance beyond silicon limitations.
Implementation Method 1
a second GaN based semiconductor layer disposed on the first GaN based semiconductor layer and having a bandgap larger than a bandgap of the first GaN based semiconductor layer
Implementation Method 2
a p-type GaN based resurf layer to alleviate lateral electric fields, thereby increasing breakdown voltage and reducing on-resistance
Data Source
AI summary
A semiconductor device includes: a first GaN based semiconductor layer; a second GaN based semiconductor layer disposed on the first layer and having a bandgap larger than that of the first layer; a first electrode disposed on the second layer; a second electrode disposed on the second layer; a p-type third GaN based semiconductor layer disposed between the first electrode and the second electrode on the second layer; a third electrode disposed on the third layer; a p-type fourth GaN based semiconductor layer disposed directly on the second layer and disposed separated from the third layer; a first insulating film disposed on the fourth layer; and a first field plate electrode disposed interposing the first insulating film in a space with the fourth layer, the first field plate electrode being separated from the fourth layer, and the first field plate electrode electrically connected to the first electrode.