Semiconductor Wire Removal via Encapsulation and Selective Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for removing semiconductor wires in 3D arrays often result in inhomogeneity and damage to underlying layers, leading to rough surfaces unsuitable for reproducible manufacturing conditions, especially in LED production.
Innovation Solution
A method involving a stack of layers with a substrate, growth masking layer, and semiconductor wires, where the wires are encapsulated with an encapsulation layer, patterned, and subjected to anisotropic etching with controlled selectivity to effectively remove wires while protecting the underlying layer and reducing surface roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wet or dry etching process is used to remove semiconductor wires, then the wires are removed from exposed areas, but the underlying layer is partially etched and damaged
Solution Approach 1:
The patent introduces an encapsulation layer as an intermediary between the semiconductor wires and the underlying layer. This encapsulation layer protects the underlying layer from etching damage while allowing selective removal of the semiconductor wires through controlled etching of the encapsulation material, thus resolving the contradiction between wire removal precision and underlying layer protection
Solution Approach 2:
The patent applies preliminary action by first encapsulating the semiconductor wires with an encapsulation layer before performing the etching process. This pre-protection measure ensures that when etching is performed to remove the wires, the underlying layer is already protected and will not be damaged by the etching process
2Manufacturing precision
If mechanical action is used to break the semiconductor wires, then the wires are removed, but the surface becomes rough and control is difficult
Solution Approach 1:
The patent replaces the mechanical action method with a chemical etching process. Instead of using mechanical force to break the wires, the invention uses selective chemical etching of the encapsulation layer to remove the wires, providing better control and producing a smoother surface suitable for reproducible manufacturing
3Manufacturing precision
If semiconductor wires are grown all over the wafer, then uniform growth is achieved, but removal from specific areas is required
Solution Approach 1:
The patent applies segmentation by dividing the wafer surface into distinct regions using a growth masking layer. This allows uniform wire growth in certain areas while preventing growth in other areas, eliminating the need for complex local removal processes and simplifying the overall manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise and efficient removal of semiconductor wires without damaging the underlying layers, achieving a smooth surface suitable for reproducible manufacturing conditions and cost-effective LED production.
Implementation Method 1
Encapsulate the semiconductor wires with an encapsulation layer in an encapsulating material, so as to form a composite layer comprising semiconductor wires and encapsulating material
Implementation Method 2
Perform anisotropic etching of the composite layer in the exposed regions, the anisotropic etching having a selectivity Ssemicon:Sencaps between semiconductor-based material and encapsulating material
Data Source
AI summary
A method for local removal of semiconductor wires (SW) including the following steps: —Provide a stack of layers including at least a substrate, a nucleation layer, a growth masking layer, and a layer including SW being grown from the nucleation layer through the growth masking layer, —Encapsulate the SW with an encapsulation layer so as to form a composite layer including SW and encapsulating material, —Pattern a hard mask on the composite layer, so as to expose regions of the composite layer, —Perform anisotropic etching of the composite layer in the exposed regions, the anisotropic etching having a selectivity Ssemicon:Sencaps between semiconductor-based material and encapsulating material such as 0.9:1<Ssemicon:Sencaps<1.1:1.