Optoelectronic Semiconductor Device with Insulating Layer and Reflector
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing optoelectronic semiconductor devices face challenges in forming reliable ohmic contacts and protecting semiconductor layers during the dicing process, particularly in achieving uniform current distribution and minimizing light reflection and absorption by electrodes.
Innovation Solution
The semiconductor device incorporates a substrate with a reflector, a semiconductor system with multiple layers, and an insulating layer to manage current distribution and light emission, using electrical connectors that penetrate through an interfacial layer to form connections with the reflector and coupling layers, and includes an insulating region to reduce current crowding and a textured surface for enhanced light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a reflector is added to improve light extraction efficiency, then optical characteristics are improved, but device structure becomes more complex
Solution Approach 1:
The patent combines the reflector structure with the existing semiconductor device layers, integrating light extraction functionality into the device architecture rather than adding it as a separate component. The reflector is positioned to work in conjunction with the semiconductor layers and electrical connectors, merging multiple functions into a unified structure that improves light extraction without proportionally increasing complexity.
2Reliability
If electrical connectors extend into the conductive layer to improve electrical connection, then electrical characteristics are improved, but the risk of damaging semiconductor layers during manufacturing increases
Solution Approach 1:
The patent positions the electrical connectors to extend into the conductive layer in advance, before the semiconductor layers are fully assembled. This preliminary positioning allows for pre-established electrical pathways that reduce the risk of damage during subsequent manufacturing steps such as dicing and assembly, as the connectors are already in place to guide and protect the electrical connections.
3Productivity
If the semiconductor device is diced into individual components, then device integration is improved, but protection of semiconductor layers during dicing becomes more difficult
Solution Approach 1:
The patent incorporates protective structures and design features in the semiconductor device before the dicing process. These pre-built protective elements cushion and protect the semiconductor layers during the mechanical stress of dicing, allowing for successful separation into individual components while minimizing damage risk.
4Reliability
If a passivation layer is formed to protect semiconductor layers during dicing, then manufacturing reliability is improved, but process control complexity increases
Solution Approach 1:
The patent designs the passivation layer and related protective structures to serve multiple functions: protecting semiconductor layers during dicing, providing electrical insulation, and facilitating subsequent assembly processes. This multi-functionality reduces the need for separate dedicated protective steps, thereby simplifying overall process control while maintaining manufacturing reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the optical, electrical, and mechanical characteristics of the semiconductor device by improving current spreading, reducing light absorption, and increasing light extraction efficiency while protecting the semiconductor layers during manufacturing.
Implementation Method 1
A reflector for reflecting light from the light-emitting layer is also optionally formed in the structure
Implementation Method 2
a textured surface for enhanced light extraction
Implementation Method 3
an insulating layer covering the first side wall and formed between the substrate and the first reflector
Data Source
AI summary
A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.


