FinFET Dummy Pattern Layout for Yield Improvement
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Solution Overview
Problem
The miniaturization of transistors in semiconductor devices leads to increased short channel effects, resulting in unexpected defects and reduced yields and productivity, particularly in FinFET structures.
Innovation Solution
A layout method is developed that includes forming circuit active fin lines and gate lines, identifying vacant regions, and setting a grid map within these regions to create dummy active fin lines and gate lines, which are arranged at the same pitch as the circuit patterns but with varying densities, to improve process margins and reduce defects during semiconductor device manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistors are miniaturized to achieve high integration, then device density is improved, but short channel effects increase causing defects and reduced yield
Solution Approach 1:
The patent applies preliminary action by forming dummy active fin lines and dummy gate lines in advance within vacant regions before final device fabrication. These dummy structures are pre-configured with specific pitches and densities to establish proper stress conditions and process margins, preventing short channel effects and defects that would otherwise occur in miniaturized transistors.
Solution Approach 2:
The patent implements local quality by creating different density regions of dummy structures adjacent to circuit regions with varying transistor densities. The dummy active fin lines and gate lines are configured with local pitch variations to match the specific requirements of adjacent circuit areas, providing localized stress control and process optimization rather than uniform treatment across the entire substrate.
2Quantity of substance
If transistors are miniaturized to achieve high integration, then device density is improved, but unexpected defects occur reducing productivity
Solution Approach 1:
The patent applies preliminary action by forming dummy active fin lines and dummy gate lines in advance within vacant regions before final device fabrication. These dummy structures are pre-configured with specific pitches and densities to establish proper stress conditions and process margins, preventing short channel effects and defects that would otherwise occur in miniaturized transistors.
Solution Approach 2:
The patent implements parameter changes by systematically varying the pitch and density of dummy active fin lines and dummy gate lines in different regions. The pitch of dummy structures is adjusted to match adjacent circuit patterns, and densities are modified based on local requirements, creating optimal process conditions that prevent defects and maintain high productivity in miniaturized devices.
3Manufacturing precision
If dummy structures are added to improve process margins, then manufacturing precision is improved, but layout complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the substrate into distinct circuit regions and vacant regions, with dummy structures confined to specific vacant areas. This segmentation allows dummy structures to be added only where needed for process optimization, rather than uniformly across the entire device, thereby improving manufacturing precision while minimizing the increase in overall layout complexity.
Solution Approach 2:
The patent applies preliminary action by forming dummy active fin lines and dummy gate lines in advance within vacant regions before final device fabrication. These dummy structures are pre-configured with specific pitches and densities to establish proper stress conditions and process margins, preventing short channel effects and defects that would otherwise occur in miniaturized transistors.
Data Source
AI summary
A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.