FinFET ESD Protection Structure with Nested SCR Doping
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Solution Overview
Problem
Conventional ESD protection structures for semiconductor devices using FinFET technology are space-occupying, hindering the miniaturization of semiconductor devices, as they are not integrated into the fin structure.
Innovation Solution
A semiconductor structure incorporating a p-n-p-n silicon-controlled rectifier (SCR) configuration with specific doping regions and fins, which reduces the necessary area for ESD protection while maintaining high holding and trigger voltages, allowing for a compact layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional ESD protection structure is used, then ESD protection function is provided, but the device area increases
Solution Approach 1:
The patent merges the ESD protection structure with the FinFET device structure by integrating the ESD protection doped regions directly into the fin structure. The first and second doped regions are formed within the fin, while the third and fourth doped regions are formed in the substrate, creating a unified structure that provides both device functionality and ESD protection without requiring separate dedicated ESD protection area.
Solution Approach 2:
The ESD protection structure is nested within the FinFET device structure. The ESD protection doped regions are embedded within the fin and substrate, with the first and second doped regions nested in the fin and the third and fourth doped regions nested in the substrate, creating a compact nested configuration that maximizes space utilization.
2Area of stationary object
If the ESD protection structure is integrated into the fin structure, then device area is reduced, but manufacturing complexity increases
Solution Approach 1:
The ESD protection structure is segmented into four distinct doped regions (first, second, third, and fourth doped regions) with different positions and functions. The first and second doped regions are segmented within the fin, while the third and fourth doped regions are segmented in the substrate, allowing for systematic manufacturing and control of each region's doping parameters.
Solution Approach 2:
Different doped regions are assigned different local qualities with specific doping types and concentrations tailored to their respective functions. The first and second doped regions have doping types opposite to the fin's channel, while the third and fourth doped regions have doping types opposite to the substrate's well, creating locally optimized doping profiles that enhance ESD protection while maintaining device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed semiconductor structure effectively provides ESD protection with a reduced footprint, achieving high holding and trigger voltages, and can be designed for bi-directional operation, thus supporting the miniaturization of semiconductor devices.
Implementation Method 1
The first doping region is disposed under the first fin. The first doping region separates the first fin from the first well. The first doping region has the second doping type.
Data Source
AI summary
A semiconductor structure suitable for ESD protection application is provided. The semiconductor structure includes a first well, a second well, a third well, a first fin, a second fin, an anode, a cathode and a first doping region. The first well and the second well are disposed in the third well. The first fin is disposed on the first well. The second fin is disposed on the second well. The anode is disposed on the first fin. The cathode is disposed on the second fin. The first doping region is disposed under the first fin, and separates the first fin from the first well. The first well, the second well, the first fin and the second fin have a first doping type. The third well and the first doping region have a second doping type.