FinFET ESD Protection via Self-Aligned Gate Doping
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Solution Overview
Problem
Advanced process technologies like FD-SOI, FinFET, and MuGFET face challenges in developing efficient ESD protection mechanisms due to shrinking component sizes and increased sensitivity to electrical overvoltages, particularly in producing thyristors and drain-extended MOS field-effect transistors, where conventional methods require specialized masks, non-self-aligning process steps, and are not compatible with all technologies.
Innovation Solution
A method for producing electronic components, including thyristors and drain-extended MOS field-effect transistors, that involves forming doped connection regions and body regions using halo and Vt implantations, with dopant atoms introduced through intermediate regions between gate regions, allowing for self-aligned definitions and compatibility with various technologies without additional process complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to produce thyristors and drain-extended MOS field-effect transistors, then ESD protection can be achieved, but specialized masks and non-self-aligning process steps are required, increasing device complexity and reducing compatibility with advanced technologies
Solution Approach 1:
The gate structure serves a dual function: as the functional gate electrode and as a self-aligned mask for dopant implantation. The dopants are introduced through the intermediate regions that are naturally formed between the gate regions, eliminating the need for separate masking steps and achieving self-alignment without additional process complexity
Solution Approach 2:
The gate structure performs multiple functions simultaneously: it provides the electrical gating function and serves as a alignment reference for dopant introduction. The intermediate regions between gate regions serve both as physical separators and as pathways for controlled dopant introduction, making the process universally applicable to different transistor types including FinFET and MuGFET
2Reliability
If conventional ESD protection methods are used, then protection functionality is achieved, but dopant concentration variations occur, reducing manufacturing precision
Solution Approach 1:
The method introduces dopants locally through the intermediate regions between gate regions, creating spatially differentiated doping zones. This local introduction method allows precise control over where dopants are placed and at what concentrations, achieving uniform dopant distribution without the variations that plague conventional methods
3Reliability
If conventional production methods are used, then ESD protection elements can be produced, but compatibility with advanced technologies like FinFET and MuGFET is limited, reducing adaptability
Solution Approach 1:
The production method is designed to be universally applicable across different transistor architectures. By using the gate structure itself as the alignment reference and introducing dopants through intermediate regions, the method works equally well for planar transistors, FinFETs, and MuGFETs, making it highly adaptable to emerging technologies without requiring technology-specific modifications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables effective ESD protection by reducing dopant concentration variations, eliminating the need for specialized masks, and ensuring compatibility with emerging and existing technologies, thereby enhancing the reliability and scalability of electronic components.
Implementation Method 1
at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions
Data Source
AI summary
In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.