FinFET and GAA NVM Cells Using Electromigration Threshold Switching
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Solution Overview
Problem
Non-volatile memories require high operating voltages for programming, necessitating charge pumps that occupy significant layout area in IC chips, and existing storage devices like FinFET and GAA transistors lack efficient mechanisms for voltage differentiation during programming and reading.
Innovation Solution
The storage device employs an electromigration mechanism to alter the threshold voltage of FinFET or GAA transistors by applying different voltages to conducting lines, eliminating the need for high program voltages and reducing the layout area by using FinFET or GAA transistors with conductive layers that change thickness due to electron flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high operating voltage is applied for programming, then the storage device can be programmed, but charge pumps are required which occupy significant layout area
Solution Approach 1:
The patent changes the voltage parameter from high (requiring charge pumps) to low (directly applicable), eliminating the need for charge pumps and significantly reducing layout area while maintaining programming functionality through electromigration mechanism
Solution Approach 2:
The patent extracts and eliminates the charge pump component from the system by using electromigration mechanism that operates at low voltage, removing the source of layout area occupation while preserving the essential programming function
2Device complexity
If conventional FinFET or GAA transistors are used, then the storage device structure is simple, but there is no efficient mechanism for voltage differentiation during programming and reading
Solution Approach 1:
The patent applies local quality by creating asymmetric voltage conditions at specific locations (drain and source) during programming, enabling voltage differentiation without changing the overall transistor structure complexity
Solution Approach 2:
The patent introduces dynamic voltage differentiation where the drain and source terminals have different voltage potentials during programming operations, allowing efficient state differentiation while maintaining simple transistor structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the program voltage requirement, minimizing the need for charge pumps and significantly reducing the overall layout area of non-volatile memory devices while maintaining efficient state differentiation through read currents.
Implementation Method 1
The storage device employs an electromigration mechanism to alter the threshold voltage of FinFET or GAA transistors by applying different voltages to conducting lines, eliminating the need for high program voltages and reducing the layout area by using FinFET or GAA transistors with conductive layers that change thickness due to electron flow
Data Source
AI summary
An enhanced electromigration storage device for a non-volatile memory is provided. When a program action is performed, two different voltages are simultaneously provided to the gate terminal of a FinFET transistor or a GAA transistor. Furthermore, the threshold of the FinFET transistor or the GAA transistor is changed according to the electromigration mechanism. Consequently, the storage device is selectively in a programmed state or an unprogrammed state. When the read action is performed, the same voltage is provided to the gate terminal of the FinFET transistor or the GAA transistor, and the storage state of the storage device is determined according to the read current generated by the FinFET transistor or the GAA transistor.