FinFET Peripheral Structure for High-Voltage HCI and GIDL Reliability

The patent applies local quality by creating asymmetric source and drain regions with different structures and doping concentrations. The drain region has a different doping concentration and depth compared to the source region, specifically optimizing the drain area where high electric fields occur during high voltage operation. This localized structural differentiation reduces peak electric fields in critical regions, thereby mitigating HCI and GIDL effects while maintaining high voltage operating capabilities.

The patent implements asymmetry by designing non-symmetric source and drain regions. The drain region is structured differently from the source region, with varying doping concentrations and geometric configurations. This asymmetric design specifically targets the reduction of electric field peaks at the drain-gate overlap region, which is the primary location where HCI and GIDL occur during high voltage operation, thus improving reliability without sacrificing power performance.

Instead of uniform source and drain regions, the patent introduces local quality variations by doping the drain region with a different concentration and depth compared to the source. This localized differentiation is achieved through selective doping processes that modify only specific regions, creating optimal electric field distribution where needed while maintaining manufacturability through established semiconductor fabrication techniques.

The patent changes key parameters of the drain region including doping concentration, doping depth, and geometric dimensions to optimize electric field distribution. By adjusting these parameters specifically in the drain region rather than uniformly across both source and drain, the patent reduces peak electric fields that cause HCI and GIDL while maintaining compatibility with existing manufacturing processes.