FinFET Active Region Layout for Balanced N/P Drive Strength
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Solution Overview
Problem
The semiconductor industry faces challenges in balancing the driving strength of n-type and p-type finFET devices in integrated circuits, leading to asymmetric active regions and unbalanced device performance during the miniaturization process.
Innovation Solution
The method involves generating specific active region layout patterns for n-type and p-type finFETs, adjusting the widths and numbers of fins to balance the driving strength, and strategically placing conductive features to optimize current resistance and circuit performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the miniaturization process is applied to reduce device size, then power consumption decreases and functionality increases, but design and manufacturing specifications become stricter and reliability challenges increase
Solution Approach 1:
The patent applies different width adjustments to n-type and p-type finFETs based on their specific electrical characteristics. N-type fins receive a first width adjustment while p-type fins receive a second width adjustment, creating local quality variations that compensate for inherent device asymmetries and maintain balanced driving strength at scaled dimensions
Solution Approach 2:
The patent changes the width parameter of finFETs differently for n-type and p-type devices. By applying specific width adjustments to each transistor type, the patent modifies critical device parameters to maintain balanced electrical performance while achieving miniaturization goals
2Shape
If n-type and p-type finFETs are designed with equal dimensions, then layout symmetry is maintained, but driving strength becomes unbalanced
Solution Approach 1:
The patent intentionally introduces asymmetry by applying different width adjustments to n-type and p-type finFETs. This asymmetric treatment compensates for the inherent electrical asymmetries between transistor types, ensuring that n-type and p-type devices achieve balanced driving strength despite their different physical and electrical characteristics
Solution Approach 2:
The patent applies localized width modifications specifically to n-type and p-type finFETs based on their individual electrical characteristics. This local quality approach ensures that each transistor type receives the appropriate dimensional adjustment to achieve balanced performance while maintaining overall layout integrity
3Device complexity
If standard cell layout designs are used without optimization, then design complexity is reduced, but circuit performance and current resistance optimization are compromised
Solution Approach 1:
The patent modifies critical geometric parameters of finFETs, specifically applying different width adjustments to n-type and p-type devices. These parameter changes optimize current resistance and driving strength balance, directly improving circuit performance while maintaining standard cell layout frameworks
Solution Approach 2:
The patent applies localized optimizations to specific transistor regions within the standard cell layout. By targeting width adjustments to n-type and p-type finFETs based on their electrical characteristics, the patent improves circuit performance without requiring complete redesign of the overall layout structure
Data Source
AI summary
An integrated circuit includes a first active region of a first set of transistors of a first type, a second active region of a second set of transistors of the first type, a third active region of a third set of transistors of the first type, a fourth active region of a fourth set of transistors of the first type and a fifth active region of a fifth set of transistors of a second type. The first, second, fourth and fifth active region have a first width in a second direction, and are on a first level. The third active region is on the first level, and has a second width different from the first width. The second active region is adjacent to the first boundary, and is separated from the first active region in the second direction. The fourth active region is adjacent to the second boundary.