FinFET Active Region Layout for Balanced N/P Driving Strength
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Solution Overview
Problem
The semiconductor industry faces challenges in designing integrated circuits with balanced driving strengths between n-type and p-type finFET devices, leading to asymmetric active region layouts that can result in unbalanced device strengths and suboptimal circuit performance.
Innovation Solution
The method involves generating specific active region layout patterns for n-type and p-type finFETs with varying numbers of fins and widths, ensuring that the sum of widths or numbers of fins for each type is balanced, and strategically positioning these devices within the integrated circuit layout to optimize driving strength and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If asymmetric active region layouts are used to accommodate different device requirements, then device functionality is achieved, but device strength balance deteriorates
Solution Approach 1:
The patent applies asymmetry principle by intentionally creating asymmetric active region layouts where n-type and p-type finFET devices have different configurations (different numbers of fins, different widths) to achieve balanced driving strengths. The asymmetric design allows each device type to be optimized independently while maintaining overall circuit balance, resolving the contradiction between adaptability and strength balance.
2Area of moving object
If miniaturization is pursued to reduce device size and power consumption, then device size and power consumption are reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies segmentation by dividing the active region into multiple fins for each finFET device. This segmentation allows the overall device area to be reduced while maintaining functional performance through the combined effect of multiple smaller fin structures. The segmented approach enables miniaturization without proportionally increasing manufacturing precision requirements, as each fin can be formed using standard lithographic processes.
Data Source
AI summary
An integrated circuit includes a first active region of a first set of transistors of a first type, a second active region of a second set of transistors of the first type, a third active region of a third set of transistors of the first type and a fourth active region of a fourth set of transistors of a second type. The first, second, third and fourth active regions extend in a first direction, and are in a first level. The first and second active regions are adjacent to a first boundary and have a first width in a second direction. The third active region is adjacent to a second boundary, and has a second width. The fourth active region is between the second active region and the third active region, and has the first width.