FinFET Structure With Oxidation Region for SOI-Like Isolation
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Solution Overview
Problem
The high manufacturing cost of silicon-on-insulator (SOI) FinFET structures due to the expensive SOI wafer, which incurs increased costs despite providing excellent electrical performance, necessitates an improved method for constructing SOI FinFET structures without using an SOI wafer.
Innovation Solution
A method is developed to form an SOI FinFET structure by creating a semiconductor structure with a semiconductive substrate and forming fins on it, using an oxidation region between the substrate and the fins, and depositing an insulator to cover the corners, allowing for the formation of a gate dielectric and gate electrode, thereby reducing parasitic capacitance and leakage while maintaining high drive current and gate control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an SOI wafer is used to form FinFET structures, then electrical performance is improved, but manufacturing cost increases
Solution Approach 1:
The patent segments the SOI wafer structure into separate components: a bulk semiconductor substrate and a separately formed oxidation region. This allows the expensive SOI wafer to be replaced with a cheaper bulk substrate while maintaining the functional benefits of the oxidation region that provides electrical isolation and performance characteristics.
Solution Approach 2:
The patent extracts the essential functional element (the oxidation region) from the expensive SOI wafer structure. By forming the oxidation region separately on a bulk substrate through selective oxidation processes, the invention retains the electrical performance benefits while eliminating the need for costly pre-fabricated SOI wafers.
2Ease of manufacture
If a bulk semiconductor substrate is used instead of an SOI wafer, then manufacturing cost is reduced, but electrical isolation and performance may be compromised
Solution Approach 1:
The patent applies preliminary action by forming the oxidation region before constructing the FinFET structures. This pre-formed oxidation region serves as a prepared isolation layer that will subsequently support the fin structures, ensuring electrical isolation is established in advance rather than requiring expensive SOI wafers.
Solution Approach 2:
The oxidation region acts as an intermediary layer between the bulk semiconductor substrate and the FinFET structures. This intermediate oxidation layer provides the necessary electrical isolation and interface properties that would otherwise require an SOI wafer, enabling the use of cheaper bulk substrates while maintaining performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs by eliminating the need for an SOI wafer while maintaining the electrical benefits of SOI FinFET structures, such as reduced leakage and improved gate control, by using a semiconductive substrate and oxidation region to form the FinFET structure.
Implementation Method 1
forming an oxidation region on the semiconductive substrate
Data Source
AI summary
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate and an oxidation region formed on the semiconductive substrate. The oxidation region includes a stage with a first width along a horizontal direction. The semiconductor structure further includes a fin formed on a top surface of the stage. A method for forming the semiconductor structure is also provided.