FinFET Resistor Tuning via U-Shaped Liners
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Solution Overview
Problem
Existing semiconductor resistor architectures face challenges in accurately tuning resistor values for specific applications, as they lack the necessary precision and flexibility.
Innovation Solution
A semiconductor structure featuring U-shaped resistive material liners between semiconductor fins, with contact structures that allow for tuning of resistivity through the choice of material, thickness, number of fins, contact length, and fin height, enabling precise resistance adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resistor architectures (polysilicon, metal, diffusion resistors) are used, then manufacturing is straightforward, but the ability to accurately tune resistor values to specific applications is limited
Solution Approach 1:
The resistor structure is segmented into multiple discrete components: U-shaped resistive material liners positioned between semiconductor fins, with contact structures making selective contact. This segmentation allows independent control of each element's dimensions and materials, enabling precise tuning of overall resistance by adjusting individual segment parameters such as liner thickness, fin spacing, and contact position.
Solution Approach 2:
Different regions of the resistor structure have different local properties: the U-shaped liners have specific resistivity values, the semiconductor fins provide conductive pathways, and the dielectric material provides isolation. By varying the local quality of materials and dimensions in different regions (e.g., changing liner thickness in specific areas or selecting different resistive materials), the overall resistance can be precisely tuned for specific applications.
2Ease of manufacture
If a simple resistor structure is used, then manufacturing is easier, but the precision and flexibility in tuning resistivity values are insufficient
Solution Approach 1:
The resistor value can be tuned by changing multiple parameters of the existing structure: the thickness of the U-shaped resistive material liner, the dimensions and spacing of semiconductor fins, the length of contact structures, and the choice of resistive material. These parameter changes allow precise control of resistance values without fundamentally changing the manufacturing process or structure type.
Solution Approach 2:
The resistor structure uses composite materials combining different functional layers: resistive material liners (such as tantalum nitride or tungsten) deposited on semiconductor fins (such as silicon germanium). This composite approach allows the structure to maintain ease of manufacture through standard deposition processes while achieving precise resistivity tuning through material selection and dimensional control.
Data Source
AI summary
A resistive material is formed straddling over each semiconductor fin that extends upward from a surface of a substrate. The resistive material is then disconnected by removing the resistive material from atop each semiconductor fin. Remaining resistive material in the form of a U-shaped resistive material liner is present between each semiconductor fin. Contact structures are formed perpendicular to each semiconductor fin and contacting a portion of a first set of the semiconductor fins and a first set of the U-shaped resistive material liners.