FinFET Source/Drain Segmentation for Low Resistance
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Solution Overview
Problem
The performance of existing FinFET semiconductor devices is limited by the short channel length, leading to increased resistance and reduced voltage driving capability, which restricts the number of gate structures that can operate effectively.
Innovation Solution
The semiconductor device includes a base substrate with a gate structure group, first and second source/drain doping regions, and a conductive layer on the surface of the first source/drain regions, where the second source/drain regions are electrically connected to source and drain voltages, and the conductive layer reduces the parallel resistance, allowing more gate structures to operate under a constant voltage difference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If multiple FinFETs are connected in serial to achieve a long channel region, then the channel length is increased, but the resistance increases and voltage driving capability is reduced
Solution Approach 1:
The source/drain region is segmented into multiple doped regions (first source/drain doping regions and second source/drain doping regions) with different doping concentrations. The first source/drain doping regions have higher doping concentration to reduce resistance, while the second source/drain doping regions have lower doping concentration to maintain channel length control. This segmentation allows the device to achieve both long channel length and low resistance simultaneously.
2Length of stationary object
If the channel region length is increased to match analog device requirements, then the device performance is improved, but the number of gate structures that can operate under constant voltage difference is reduced
Solution Approach 1:
Different regions of the source/drain structure are assigned different doping qualities. The first source/drain doping regions located between adjacent gate structures have high doping concentration to provide low resistance pathways, while the second source/drain doping regions at the ends have lower doping concentration. This local quality differentiation enables long channel operation with maintained voltage driving capability across multiple gate structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reduced resistance enables a larger number of gate structures to control the channel regions, increasing the design range and operational efficiency of the semiconductor device.
Implementation Method 1
a first conductive layer formed on a surface of each of first source/drain doping regions. The second source/drain doing regions at one side of the gate structure group are electrically connected source voltages; and the second source/drain doping regions at the other side of the gate structure group are electrically connected drain voltages.
Data Source
AI summary
Semiconductor devices and fabrication methods thereof are provided. An exemplary semiconductor device includes a base substrate; a gate structure group, having a plurality of gate structures, formed over the base substrate; first source/drain doping regions formed in the base substrate between adjacent gate structures; second source/drain doping regions formed in the base substrate at two sides of the gate structure group, respectively; a first conductive layer formed on a surface of each of the first source/drain doping regions. The second source/drain doing regions at one side of the gate structure group are electrically connected with source voltages; and the second source/drain doping regions at other side of the gate structure group are electrically connected with drain voltages.