FinFET Shallow Trench Insulation Profile for Short-Channel Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices are scaled down, they face challenges such as short channel effects, which degrade operating characteristics, and require methods to improve performance, reliability, and reduce power consumption while managing high integration levels.
Innovation Solution
The semiconductor device incorporates a substrate with fins and shallow trenches, where a field insulating film is used to fill the trenches. This film is formed using an atomic layer deposition (ALD) method and has a specific shape with varying slopes and inflection points, enhancing the device's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size and design rule of semiconductor devices are reduced to achieve high integration, then the integration level increases, but short channel effects occur which degrade operating characteristics
Solution Approach 1:
The field insulating film is formed with different thicknesses at different locations: thinner at the center of the shallow trench and thicker at the side walls. This local variation in thickness provides different functions - the thinner center region allows better electrical isolation while the thicker side wall regions provide enhanced mechanical support and stress control, thereby improving operating characteristics without compromising integration density
Solution Approach 2:
The invention changes the thickness parameter of the field insulating film from a uniform value to a non-uniform distribution with an inflection point. This parameter variation optimizes the balance between electrical isolation performance and mechanical stability, addressing short channel effects while maintaining high integration levels
2Reliability
If conventional methods are used to form field insulating films, then the manufacturing process is simpler, but the fillability and performance are insufficient
Solution Approach 1:
The field insulating film is formed with a predetermined non-uniform thickness profile featuring an inflection point before subsequent manufacturing steps. This preliminary structuring ensures optimal fillability and electrical performance is achieved upfront, preventing defects in later processing while the complexity is managed through controlled deposition techniques
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described semiconductor device achieves improved operating characteristics, simplified manufacturing processes, and reduced power consumption by effectively addressing short channel effects and enhancing the fillability of the field insulating film within the shallow trenches.
Implementation Method 1
a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench
Data Source
AI summary
A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.