Flared Source Structures for Semiconductor Yield
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Solution Overview
Problem
As the degree of integration of semiconductor devices increases, unexpected problems arise, necessitating improvements in yield and productivity, particularly in the design of semiconductor memory devices.
Innovation Solution
The implementation of semiconductor devices with flared source structures, including a semiconductor substrate with memory cell and pad regions, featuring separation source structures with parallel portions and end portions that oppose each other, allowing for increased width and then decreased width configurations, enhancing the arrangement of word lines and string select lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the degree of integration of semiconductor devices is increased, then the density and capacity of the device improve, but unexpected problems arise that reduce yield and productivity
Solution Approach 1:
The source structure is divided into multiple segments including a first source structure in the first pad region, a second source structure in the second pad region, and a separation source structure between them. This segmentation allows each portion to be independently optimized and formed, reducing defects while maintaining high integration.
Solution Approach 2:
Different regions of the source structure have different widths optimized for their specific functions: the first and second source structures have wider portions in pad regions for better electrical connection, while the separation source structure has controlled width to prevent defects. The end portions have increased width to improve electrical characteristics locally where needed.
2Quantity of substance
If the degree of integration is increased, then device capacity improves, but manufacturing defects increase reducing productivity
Solution Approach 1:
The source structure is segmented into first, second, and separation source structures that can be formed in separate process steps or regions. This allows manufacturing defects to be isolated and controlled in specific segments rather than affecting the entire high-density structure.
Solution Approach 2:
The separation source structure acts as an intermediary element between the first and second source structures. It provides a buffer zone that prevents defect propagation and allows for process optimization without compromising the entire device structure.
3Reliability
If source structures are designed with flared end portions, then electrical characteristics improve, but structural complexity increases
Solution Approach 1:
The flared geometry is applied only to the end portions of the source structures where electrical connection is critical, while the main body maintains a simpler rectangular shape. This localized complexity improvement provides better electrical characteristics without significantly increasing overall manufacturing complexity.
Solution Approach 2:
The width increase is applied partially only to the end portions rather than the entire source structure. This partial application of the flared geometry provides the necessary electrical improvement while limiting the increase in structural complexity to only where it is most beneficial.
Data Source
AI summary
A semiconductor device includes a structure including gate electrodes and interlayer insulating layers alternately stacked on an upper surface of a substrate, trenches passing through the structure; and a groove passing through a portion of the structure. The gate electrodes include word lines, and first and second select lines. The word lines are stacked in a vertical direction upwardly from the upper surface of the substrate. The first and second select lines are on the word lines, and are spaced apart from each other in a first horizontal direction parallel to the upper surface of the substrate. The trenches include a first trench and a second trench spaced apart from the first trench. The groove is on the word lines. The groove and a portion of the first trench are between the first select line and the second select line. The second trench is spaced apart from the select lines.