Flash Memory Programming Method for Bank Group Interleaving
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Flash memory devices face challenges in efficiently programming multi-bit data due to the longer time required for programming most significant bits (MSB) compared to least significant bits (LSB), leading to channel waste and inefficiencies in storage operations.
Innovation Solution
A programming method for flash memory devices that alternates between programming MSB and LSB pages across different bank groups, optimizing the sequence to reduce overall programming time and minimize channel waste by prioritizing LSB page programming initially followed by MSB page programming within each bank group.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If MSB page is programmed first, then data storage completeness is ensured, but programming time increases and channel waste occurs
Solution Approach 1:
The patent applies preliminary action by programming the LSB page first before the MSB page. Since LSB programming requires less time and can be completed quickly, this preliminary action allows the system to prepare data storage quickly and then proceed to the time-consuming MSB programming in a controlled manner, thereby reducing overall channel waste while ensuring complete data storage.
2Ease of operation
If sequential programming of MSB then LSB is used, then programming simplicity is maintained, but channel utilization efficiency decreases
Solution Approach 1:
The patent inverts the conventional programming sequence by programming LSB page first and then MSB page. This inversion is achieved through the bank group switching mechanism where the controller alternates between first and second bank groups, allowing LSB programming to complete quickly while MSB programming follows in a controlled manner, thereby improving channel utilization efficiency without significantly complicating the programming operation.
3Loss of time
If bank groups are switched between MSB and LSB programming, then channel waste is reduced, but control complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the flash memory into multiple bank groups (first bank group and second bank group), each responsible for specific programming tasks. The controller alternates between these segmented bank groups to perform LSB and MSB programming in an interleaved manner, which reduces channel waste by keeping the programming channel actively utilized while distributing the control complexity across manageable segments.
4Quantity of substance
If multi-bit data is stored in one memory cell, then storage capacity increases, but programming time and channel waste increase
Solution Approach 1:
The patent segments the multi-bit data programming into separate LSB and MSB page programming operations distributed across different bank groups. This segmentation allows the programming process to handle multi-bit data in smaller, more manageable chunks sequentially, reducing the overall programming time and channel waste while maintaining the ability to store multiple bits per cell.
Data Source
AI summary
Provided is a programming method that increases writing performance of a flash memory device. The programming method for a flash memory device that includes a plurality of banks including a plurality of memory cells for storing multi-bit data includes the following: programming a most significant bit (MSB) page with respect to banks of a first bank group; programming a least significant bit (LSB) page with respect to banks of a second bank group; programming the MSB page with respect to the banks of the second bank group; and programming the LSB page with respect to the banks of the first bank group.