Flash Memory High Voltage Generator Source Line Compensation
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Solution Overview
Problem
Flash memory devices experience voltage drops in the source line during programming due to variable current consumption, leading to degradation in program characteristics, especially when multiple data bits are programmed simultaneously.
Innovation Solution
A high-voltage generator system that adjusts the high voltage supplied to the source line based on current consumption during programming, using a pump circuit, voltage divider, comparator, detector, and variable resistor circuit to maintain a constant current rate without relying on the data being programmed, ensuring the voltage remains stable across memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple data bits are programmed simultaneously, then programming speed is improved, but current consumption increases causing voltage drops in the source line
Solution Approach 1:
The high voltage generator dynamically adjusts the high voltage level based on real-time current consumption detection. When multiple data bits are programmed simultaneously causing increased current consumption, the system automatically increases the high voltage to compensate for the voltage drop, maintaining stable program characteristics across different programming loads
Solution Approach 2:
The system incorporates a feedback mechanism where current consumption is detected and fed back to the high voltage generator. The high voltage generator uses this feedback information to adjust the high voltage level accordingly, creating a closed-loop control system that maintains optimal programming conditions regardless of the number of data bits being programmed
2Reliability
If high voltage is increased to compensate for voltage drops, then program characteristics are maintained, but device complexity increases
Solution Approach 1:
The high voltage generator is designed to self-regulate based on detected current consumption. The system automatically adjusts high voltage without external intervention, using an integrated detector and control mechanism that operates autonomously within the memory device, reducing the need for external complex control systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution maintains a consistent current consumption and voltage level across memory cells, improving program characteristics by dynamically increasing the high voltage in response to increased current demand, thereby preventing voltage drops and enhancing data programming efficiency.
Implementation Method 1
a pump circuit configured to generate a high voltage
Implementation Method 2
a voltage divider configured to divide the high voltage generated by the pump circuit
Implementation Method 3
a detector configured to detect an amount of current consumed during the programming operation
Data Source
AI summary
A flash memory device including: a memory cell array having memory cells arranged in rows and columns; and a high voltage generator configured to generate a high voltage supplied into a source line of the memory cell array during a programming operation. The high voltage generator operates to vary the high voltage along an amount of current supplied into the memory cell array during the programming operation.