Built-in Leakage Measurement Circuitry for Flash Memory Word Lines
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Solution Overview
Problem
Conventional leakage current measurement in flash memory devices requires external instruments, leading to prolonged test times and increased manufacturing costs due to the need for external measurement systems.
Innovation Solution
Incorporating a built-in leakage measurement circuit within the memory device that generates reference currents to determine acceptable leakage levels on word lines, allowing for internal measurement and reducing test time and production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If external leakage measurement instruments are used to measure leakage current on word lines, then measurement accuracy can be ensured, but test time increases and manufacturing costs increase
Solution Approach 1:
The memory device measures its own leakage current using built-in measurement circuitry integrated within the device. The leakage measurement circuit includes a measurement capacitor coupled to a bit line and control circuitry that controls voltage application to word lines and floating gates, enabling the device to perform self-diagnosis without external instruments during manufacturing testing.
Solution Approach 2:
The leakage measurement function is merged with the existing memory device structure by integrating measurement circuitry that shares common components such as bit lines, word lines, and control gates with the normal memory operation circuits. This consolidation eliminates the need for separate external measurement equipment and reduces test time.
2Measurement precision
If external leakage measurement instruments are used to measure leakage current on word lines, then measurement can be performed, but device complexity and manufacturing cost increase
Solution Approach 1:
The memory device measures its own leakage current using built-in measurement circuitry integrated within the device. The leakage measurement circuit includes a measurement capacitor coupled to a bit line and control circuitry that controls voltage application to word lines and floating gates, enabling the device to perform self-diagnosis without external instruments during manufacturing testing.
Solution Approach 2:
The control circuitry in the leakage measurement circuit is designed to perform multiple functions: it controls voltage application to word lines during leakage measurement, manages charging/discharging of the measurement capacitor, and can potentially be integrated with or share functionality with the normal memory control circuits, reducing overall system complexity.
3Productivity
If built-in leakage measurement circuit is implemented, then test time and manufacturing cost are reduced, but device complexity increases
Solution Approach 1:
The leakage measurement function is merged with the existing memory device structure by integrating measurement circuitry that shares common components such as bit lines, word lines, and control gates with the normal memory operation circuits. This consolidation eliminates the need for separate external measurement equipment and reduces test time.
Solution Approach 2:
The control circuitry in the leakage measurement circuit is designed to perform multiple functions: it controls voltage application to word lines during leakage measurement, manages charging/discharging of the measurement capacitor, and can potentially be integrated with or share functionality with the normal memory control circuits, reducing overall system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The internal leakage measurement circuit enables faster and more efficient detection of acceptable leakage currents, reducing manufacturing cycle time and overall production costs by eliminating the need for external measurement instruments.
Implementation Method 1
the leakage measurement circuit may include a measurement capacitor coupled to a bit line and control circuitry to control voltages applied to the plurality of word lines and the floating gate
Data Source
AI summary
The present invention is a circuit and method for measuring leakage on the plurality of word lines in a memory device. In one embodiment, a memory device may include a leakage measurement circuit that is coupled to a plurality of word lines of the memory device. The leakage measurement circuit may be operable to generate a reference current and to determine whether a leakage current on one of the plurality of word lines is acceptable relative to the reference current. In another embodiment, a method may include determining whether leakage on one of a plurality of word lines of a memory device is allowable using a circuit in the memory device.