Flash Memory Floating Gate Metal Nano Particle Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current flash memory devices face challenges in controlling the size, concentration, and position of metal nano particles in the floating gate, which affects their charge trap ability and storage capacity, particularly in portable electronic devices.
Innovation Solution
A method of manufacturing flash memory devices by forming metal nano particles in an amorphous metal silicon oxide thin layer using an electron beam, where the size, concentration, and position of the particles are controlled through adjustments in the electron beam's focal size, projection time, and position, and the particles are surrounded by a silicon oxide insulation layer to enhance charge trap ability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If metal nano particles are formed in the floating gate without precise electron beam control, then the manufacturing process is simpler, but the size, concentration, and position of metal nano particles cannot be controlled
Solution Approach 1:
The patent applies parameter changes by adjusting electron beam projection conditions (energy, time, position) to control metal nano particle formation. By varying these parameters, precise control over particle size, concentration, and position is achieved without requiring complex additional equipment.
Solution Approach 2:
The patent replaces mechanical control methods with electron beam projection to form metal nano particles. This substitution enables non-contact, high-precision control of particle characteristics through electromagnetic field manipulation rather than mechanical means.
2Reliability
If metal nano particles are formed without surrounding insulation layer, then the manufacturing process is simpler, but the charge trap ability is reduced
Solution Approach 1:
The patent introduces a silicon oxide insulation layer as an intermediary between the metal nano particles and the surrounding environment. This intermediary layer enhances charge trap ability by preventing charge leakage while maintaining particle functionality, resolving the contradiction between reliability and structural complexity.
3Quantity of substance
If larger metal nano particles are formed to increase storage capacity, then the storage capacity improves, but the charge trap ability per unit area decreases
Solution Approach 1:
The patent uses parameter changes in electron beam projection (energy, time, focal size) to precisely control metal nano particle size. This enables optimization of particle dimensions to achieve both high storage capacity and maintained charge trap ability by forming particles of optimal size rather than simply maximizing size.
Solution Approach 2:
The patent applies local quality by creating uniform distribution of metal nano particles with specific size characteristics throughout the floating gate. This ensures consistent charge trap ability across different regions while achieving high overall storage capacity through controlled particle density and size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables improved charge trap ability and storage capacity in flash memory devices, suitable for high-capacity storage in portable electronic devices, such as mobile phones and PMPs, by accurately controlling the metal nano particles' characteristics.
Implementation Method 1
forming metal nano particles in the floating gate by projecting an electron beam on the floating gate
Implementation Method 2
metal nano particles being generated by separating the metal nano particles and the silicon oxide layer in the amorphous metal silicon oxide thin layer
Implementation Method 3
forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate
Implementation Method 4
forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process
Data Source
AI summary
Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate where the metal oxide thin layer is formed, and forming metal nano particles in the floating gate by projecting an electron beam on the floating gate, the metal nano particles being surrounded by a silicon oxide layer.