Flash Memory Floating Gate Nanoparticle Ordering
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Solution Overview
Problem
Current methods for fabricating flash memory devices using nanoparticles face challenges in achieving commercially viable mass production due to lack of control over nanoparticle size, position, and distribution, leading to issues with capacitance and coupling ratio, which affect programming and accessing speeds.
Innovation Solution
A process involving the deposition of nonlithographic nanoparticles with small size distribution in a high vacuum environment, followed by ordering using a proprietary technique to prevent agglomeration, and subsequent formation of control oxide layers, enables the creation of nanoparticle-based floating gate flash memory devices with improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional lithographic methods are used to deposit nanoparticles for flash memory fabrication, then mass production is achieved, but control over nanoparticle size, position, and distribution is poor leading to reduced capacitance and coupling ratio
Solution Approach 1:
The patent replaces conventional lithographic mechanical deposition methods with a self-assembly process where nanoparticles are deposited in a high vacuum environment and then ordered using external fields (electrical or magnetic). This substitution enables precise control over nanoparticle position and distribution without sacrificing mass production capability, directly resolving the contradiction between productivity and manufacturing precision.
Solution Approach 2:
The patent changes the deposition environment parameters by using high vacuum conditions instead of atmospheric lithographic processes. This parameter change allows for better control over nanoparticle size distribution and prevents agglomeration, while the subsequent field-based ordering provides precise positional control, thereby improving manufacturing precision while maintaining productivity.
2Reliability
If nanoparticle density is increased to improve capacitance, then coupling ratio improves, but nanoparticle agglomeration occurs reducing device performance
Solution Approach 1:
The patent applies preliminary ordering actions to nanoparticles immediately after deposition in the high vacuum environment. By using external fields to order the nanoparticles before they can agglomerate, the process achieves high nanoparticle density for improved capacitance and coupling ratio while maintaining uniform distribution and preventing agglomeration-related performance degradation.
3Reliability
If nonlithographic nanoparticle deposition is used to achieve uniform distribution, then manufacturing complexity increases, but device performance improves
Solution Approach 1:
The patent employs a self-assembly mechanism where nanoparticles automatically order themselves into uniform distributions when deposited in a high vacuum environment and subjected to external fields. This self-service approach achieves uniform nanoparticle distribution and high device performance without requiring complex lithographic patterning steps, thereby improving reliability while managing fabrication process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the production of flash memory devices with enhanced performance by ensuring uniformity and ordering of nanoparticles, thereby increasing capacitance and coupling ratio, leading to faster read/write times and reduced power consumption.
Implementation Method 1
applying a field to the conductive nanoparticles on the insulating surface that moves the conductive nanoparticles to a different distribution on the insulating surface
Implementation Method 2
applying a field to the conductive nanoparticles on the insulating surface that moves the conductive nanoparticles to a different distribution on the insulating surface
Implementation Method 3
depositing the conductive nanoparticles to the insulating surface in a high vacuum environment
Data Source
AI summary
Methods, apparatus and systems form memory structures, such as flash memory structures from nanoparticles by providing a source of nanoparticles as a conductive layer. The particles are moved by application of a field, such as an electrical field, magnetic field and even electromagnetic radiation. The nanoparticles are deposited onto an insulating surface over a transistor in a first distribution of the nanoparticles. A field is applied to the nanoparticles on the surface that applies a force to the particles, rearranging the nanoparticles on the surface by the force from the field to form a second distribution of nanoparticles on the surface. A protective and enclosing insulating layer is deposited on the nanoparticle second distribution. The addition of a top conductive layer completes a basic flash memory structure.