Flash Memory Pre-charge Voltage Control
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Solution Overview
Problem
Conventional memory read operations in flash memory devices are slow due to the need for the memory line to be charged to a stabilized voltage level, often resulting in voltage overshoot or undershoot, which can lead to damage and prolonged read times.
Innovation Solution
A pre-charge voltage system that uses a control component to regulate pulse width and a leakage component to govern pulse height, ensuring the voltage remains within a desirable range, thus eliminating overshoot and undershoot, and allowing for faster read times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the memory line is charged to a stabilized voltage level before reading, then the read operation can be performed, but the read time becomes relatively long
Solution Approach 1:
The patent applies preliminary action by pre-charging the memory line to a voltage level close to the target stabilized voltage before the actual read operation begins. This preliminary charging action reduces the time required for voltage stabilization during the read operation, thereby decreasing overall read time while maintaining voltage stability for reliable data reading.
2Speed
If an initial voltage application is added to speed up charging, then read time can be reduced, but voltage overshoot occurs
Solution Approach 1:
The patent employs feedback mechanisms through control circuits that monitor the voltage level on the memory line during charging and dynamically adjust the charging current. When the voltage approaches the target level, the control circuit reduces or stops the charging current to prevent overshoot, thereby achieving fast charging speed while maintaining voltage within safe operating ranges.
Solution Approach 2:
The patent applies dynamics by using variable resistance elements and controllable current sources that can dynamically adjust their characteristics during the charging process. This dynamic adjustment allows the system to provide high charging current initially for fast charging, then smoothly reduce the current as voltage approaches the target level, preventing overshoot while maintaining high speed.
3Productivity
If voltage is increased to reduce read time, then charging is faster, but voltage undershoot and overshoot occur causing potential damage
Solution Approach 1:
The patent applies beforehand cushioning by incorporating protection circuits and controlled charging mechanisms that prevent voltage from exceeding safe limits during the charging process. These protective measures are built into the charging system to cushion against potential overshoot and undershoot events, ensuring that even during fast charging operations, the voltage remains within safe operating ranges and does not cause damage to the memory device.
Data Source
AI summary
Commonly, read times of a memory line are slowed due to voltage overshoot and/or voltage undershoot. To eliminate these problems, a control component can manage voltage while a leakage component manages timing of voltage. This allows for a line pre-charge that produces increase read times. The control component can implement as a variable resistor that modifies value to compensate for temperature. The leakage component can include a capacitor configuration that allows voltage to pass.