Flash Memory Program Method Parallel Word Line Operations
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Solution Overview
Problem
Existing flash memory technologies face challenges in achieving higher operation speeds due to the need for multiple voltage setup phases during program and program-verification operations, which hinder performance.
Innovation Solution
A program method and flash memory design that selects two memory sectors corresponding to different word lines and determines specific operation phases, allowing one word line to be biased with a setup voltage for program or program-verification operations while the other word line is driven in the alternate operation phase, thereby reducing the number of voltage setup phases required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional flash memory performs program and program-verification operations sequentially with separate voltage setup phases for each memory sector, then operation reliability is maintained, but operation speed is limited due to multiple voltage setup phases
Solution Approach 1:
The patent combines the voltage setup phase of a first memory sector with the program or program-verification operation phase of a second memory sector. Specifically, while the first word line is being biased with a setup voltage, the second word line simultaneously performs program or program-verification operations, and vice versa. This merging of phases across different memory sectors eliminates redundant voltage setup time and improves operation speed.
2Productivity
If flash memory uses separate operation phases for voltage setup and program/program-verification operations for each memory sector, then operation accuracy is ensured, but device complexity increases due to multiple phase management requirements
Solution Approach 1:
The patent divides the flash memory into multiple memory sectors (at least a first and second memory sector) that can operate independently with different word lines. This segmentation allows each sector to be managed separately, enabling parallel operation where one sector undergoes voltage setup while another performs program or verification operations. The segmentation reduces overall operation phase management complexity by distributing operations across multiple independent sectors.
Data Source
AI summary
A program method, applied in a flash memory, includes the following steps. Firstly, a first memory sector and a second memory sector are selected, wherein the first and the second memory sectors respectively correspond to a first word line and a second word line. Next, a first operation phase and a second operation phase are determined. Then, the first word line is biased with a first setup voltage, and the second word line is driven in one of a program operation and a program-verification operation, in the first operation phase. After that, the second word line is biased with a second setup voltage, and the first word line is driven in the other one of the program operation and the program-verification operation in the second operation phase.