Flash Memory Well Voltage Control for Programming Disturbance Suppression
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Solution Overview
Problem
Conventional flash memory devices experience inferior performance and reliability due to improper voltage control during programming, read, and erase operations, leading to programming disturbances in unselected memory cells.
Innovation Solution
The memory device employs a voltage generator and control circuit to apply specific voltage levels to the well and other components, reducing electron accumulation in unselected strings by charging and discharging the well voltage, thereby minimizing programming disturbances during programming operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional voltage control is used during programming operations, then the device structure remains simple, but programming disturbances occur in unselected memory cells leading to inferior performance and reliability
Solution Approach 1:
The patent applies preliminary action by charging the well voltage before the programming operation and discharging it after the programming operation. This pre-charging and post-discharging sequence prepares the well to suppress electron accumulation in unselected strings during the programming process, thereby preventing programming disturbances without requiring complex real-time voltage adjustment during the actual programming operation.
Solution Approach 2:
The patent implements periodic action through the sequential charging and discharging of the well voltage. The well is charged to a first voltage level before programming, then discharged after programming. This periodic voltage application pattern creates distinct time windows where the well voltage is high (suppressing electron accumulation) and low (allowing normal operation), effectively managing programming disturbances through time-based voltage modulation.
2Manufacturing precision
If voltage levels are not precisely controlled during programming, then the control circuit complexity is reduced, but electron accumulation occurs in unselected strings causing programming disturbances
Solution Approach 1:
The control circuit performs preliminary charging of the well voltage to a specific first voltage level before the programming operation begins. This pre-established voltage condition ensures that when programming occurs, the well is already in the optimal state to suppress electron accumulation in unselected strings, achieving precise programming control without requiring complex real-time voltage regulation during the programming pulse.
Solution Approach 2:
The patent applies dynamics by transitioning the well voltage between distinct states (charged and discharged). The control circuit dynamically adjusts the well voltage timing - charging it before programming operations and discharging it afterward. This dynamic voltage modulation allows the system to adapt the well voltage state according to the operational phase, achieving precise control of electron accumulation without requiring continuously complex voltage regulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces electron accumulation in unselected strings, enhancing the reliability and performance of flash memory devices by suppressing programming disturbances and allowing for more precise control of voltage levels, which improves data storage accuracy.
Implementation Method 1
a voltage generator and control circuit to apply specific voltage levels to the well and other components, reducing electron accumulation in unselected strings by charging and discharging the well voltage
Data Source
AI summary
Some embodiments include methods and devices having a module and memory cells. The module is configured to reduce the amount of electrons in the sources and drains of the memory cells during a programming operation.