Flash Memory Word Line Leakage Detection During Programming
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Solution Overview
Problem
Flash memory devices experience leakage current issues during programming operations, particularly when a word line burns out, leading to uncorrectable error correction codes and program failures, which are not detected by existing programming status indicators.
Innovation Solution
A current detector is positioned between a pump source and a global word line to monitor leakage current in word lines, using resistor circuits and transistors to compare voltage thresholds, identifying blocks with leakage current to prevent data loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a program operation is performed in flash memory, then data is written to memory cells, but leakage current may occur in word lines causing uncorrectable errors and program failures that cannot be detected
Solution Approach 1:
A current detector is introduced as an intermediary component between the pump source and the global word line to monitor leakage current. The detector includes a resistor circuit that converts the leakage current into a voltage signal, which is then compared against a threshold to identify problematic word lines during program operations
Solution Approach 2:
The system implements feedback by continuously monitoring the voltage across the resistor circuit during program operations and comparing it with a preset threshold. When the voltage exceeds the threshold, the system identifies leakage current and can take corrective actions such as marking the affected block as unusable, preventing further operations on faulty word lines
2Loss of information
If existing programming status indicators are used, then program operation status is monitored, but leakage current in word lines is not detected leading to data loss
Solution Approach 1:
The current detector is designed to perform multiple functions: it monitors leakage current during program operations, identifies affected word lines, and provides feedback for error prevention. The same resistor circuit and comparison logic can be integrated into existing memory control structures, allowing the detection mechanism to serve both monitoring and protective roles without requiring entirely separate systems
Solution Approach 2:
The system performs preliminary detection of leakage current during the program operation itself, before data loss occurs. By monitoring the voltage across the resistor circuit in real-time and comparing it against thresholds, the system can identify problematic conditions early and prevent further operations on affected blocks, thereby preventing data loss before it happens
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively detects and prevents the use of blocks with leakage current, thereby avoiding data loss and program failures by identifying and isolating affected blocks.
Implementation Method 1
A voltage over a combination of one or more resistors is compared with a preset threshold during the program operation
Data Source
AI summary
Example memory devices, memory systems, methods, and media for detection of leakage current in a memory device are disclosed. One example method includes performing a program operation of the memory device. A voltage over a combination of one or more resistors is compared with a preset threshold during the program operation, where the one or more resistors are positioned between a pump source and a global word line in the memory device. It is determined that the voltage is larger than or equal to the preset threshold. In response to the determination that the voltage is larger than or equal to the preset threshold, it is indicated that a leakage current exist in a word line coupled to a memory cell in the memory device.