Flat Diode Layout With Metal-Free Edge to Prevent Short-Circuits
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Solution Overview
Problem
Existing diode arrangements for polarity reversal protection and circuit protection lack a compact, cost-effective, and efficient design that effectively manages heat and environmental influences while minimizing the risk of short-circuits and improving handling and processing.
Innovation Solution
A planar, uncased semiconductor diode arrangement with a p/n junction, featuring a predominantly metal-plated surface area for reliable contact and heat dissipation, along with flat metallic connectors for secure bonding, which prevents smearing during sawing and enhances thermal insulation without additional housing, allowing for easy handling and parallel connection of diodes for increased reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the surface area of the upper side and underside is completely or predominantly metal-plated to improve contact reliability and heat dissipation, then the electrical conductivity and thermal management are improved, but the risk of short-circuits between upper surface and side surface increases during sawing process
Solution Approach 1:
The metal plating is segmented into two distinct regions: a predominantly metal-plated surface area for electrical contact and heat dissipation, and a circumferential metal-free region along the edges. This segmentation prevents short-circuits during sawing while maintaining reliable electrical contacts on the upper and lower surfaces.
Solution Approach 2:
Different regions of the semiconductor component are assigned different metal plating qualities: the central surface areas (upper and lower) have extensive metal plating for electrical conductivity and thermal management, while the circumferential edge regions are deliberately left metal-free to prevent harmful short-circuits during processing.
2Object-affected harmful factors
If traditional housing and casting compound are used to protect the semiconductor diode, then environmental protection and structural support are improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The traditional housing and casting compound are completely removed from the design. The semiconductor diode is presented as an uncased finished product, eliminating the need for additional protective housing structures while reducing device complexity and manufacturing cost.
Solution Approach 2:
The semiconductor diode's own structure, with its predominantly metal-plated surfaces and circumferential metal-free regions, provides the protection and structural support that would traditionally require separate housing components. The component serves its own protective needs through its inherent design.
3Ease of operation
If the connecting piece protrudes significantly from the contact surfaces to facilitate handling, then the ease of operation is improved, but the planar design and compact arrangement are compromised
Solution Approach 1:
The connecting piece is designed with minimal protrusion (no more than 1.5-2.5 mm) from the contact surfaces, providing just enough height for handling and assembly while maintaining the overall planar and compact design of the device. This partial protrusion is sufficient for operational needs without sacrificing the planar aesthetic and compact form factor.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides an ultra-flat, compact, and cost-effective diode arrangement that effectively manages heat and environmental influences, reduces the risk of short-circuits, and enhances handling and processing, while improving reliability and current-carrying capacity through efficient heat removal and parallel connection capabilities.
Implementation Method 1
A first electrical contact is formed on the upper side and a second electrical contact is formed on the underside. The predominantly metal-plated upper side forms the first contact and the metal-plated underside forms the second contact of the semiconductor diode.
Implementation Method 2
The predominantly metal-plated upper side forms the first contact and the metal-plated underside forms the second contact of the semiconductor diode. The metal-plated surface area provides reliable contact and heat dissipation.
Implementation Method 3
A circumferential region on the boundary or on the edge is not metal-plated to avoid short-circuits between the upper surface and side surface. During the manufacture of the semiconductor wafer, in particular, a separation of the multiplicity of diodes is usually carried out with the aid of a sawing process.
Implementation Method 4
a semiconductor diode having exactly one p/n junction. The semiconductor diode has a p-doped upper side and an n-doped underside or an n-doped upper side and a p-doped underside.
Data Source
AI summary
A diode arrangement, including a semiconductor diode with a p/n junction. A first electrical contact is formed on an upper side and a second electrical contact is formed on an underside. The semiconductor being designed in an uncased manner as a flat die and having a planar upper side and a planar underside, and the metal-plated upper side forming the first contact of the semiconductor diode, and the metal-plated underside forming the second contact. A first flat metallic conductor has a first contact surface and a second contact surface spaced a distance apart from the first contact surface by a connecting piece. A second flat metallic connector has a first contact surface and a second contact surface spaced a distance from the first contact surface by a connecting piece. The metal-plated upper side is connected in a materially bonded manner to the first contact surface of the first metallic connector.