Flat Panel Detection Substrate With Thick Semiconductor Layer
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Solution Overview
Problem
Conventional metal-semiconductor-metal interdigital electrode photoelectric detectors face issues with high dark current, poor signal transmission due to oxidation of interdigital electrodes, and non-uniformity of polyimide insulating layers, leading to increased resistance and reduced detection efficiency.
Innovation Solution
A flat panel detection substrate with a semiconductor layer thicker than 100 nm, directly contacting bias and sense electrodes, which functions as both a photoelectric conversion layer and a dielectric layer, eliminating the need for a polyimide insulating layer and simplifying the fabrication process, while using a high-mobility second semiconductor layer for efficient signal generation and a low-mobility first layer for insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a polyimide insulating layer is used between interdigital electrodes and semiconductor layer, then insulation is provided, but the insulating layer becomes non-uniform causing increased resistance and poor signal transmission
Solution Approach 1:
The patent removes the polyimide insulating layer entirely from the structure. Instead of using an organic insulating layer that causes uniformity issues, the invention relies on the semiconductor layer itself (with thickness >100nm) to provide both photoelectric conversion and insulation functions, eliminating the source of non-uniformity and resistance problems
Solution Approach 2:
The semiconductor layer is designed to perform multiple functions simultaneously: it serves as both the photoelectric conversion layer and the insulating layer. By making the semiconductor layer thicker than 100nm, it provides sufficient insulation between electrodes while maintaining its photoelectric detection function, eliminating the need for a separate polyimide insulating layer
2Ease of manufacture
If interdigital electrodes are used in metal-semiconductor-metal structure, then simple fabrication and high filling rate are achieved, but oxidation of electrodes occurs causing high dark current
Solution Approach 1:
The patent introduces an insulating layer (either dielectric layer or sufficiently thick semiconductor layer >100nm) as an intermediary between the metal interdigital electrodes and the semiconductor material. This intermediary prevents direct contact and oxidation of the electrodes, thereby reducing dark current while maintaining the simple metal-semiconductor-metal fabrication approach
Solution Approach 2:
The invention uses composite material structures where metal electrodes are combined with insulating dielectric layers and semiconductor layers. This composite structure prevents electrode oxidation by isolating the metal from direct exposure to semiconductor material, reducing dark current while preserving fabrication simplicity
3Reliability
If semiconductor layer thickness is increased to improve photoelectric conversion, then detection efficiency improves, but fabrication complexity increases
Solution Approach 1:
The patent designs the semiconductor layer to perform dual functions: photoelectric conversion and electrical insulation. By optimizing the thickness to be greater than 100nm, the layer provides sufficient insulation to eliminate the need for separate polyimide insulating layers, simplifying fabrication while maintaining detection efficiency through adequate photoelectric conversion volume
Solution Approach 2:
The invention merges the photoelectric conversion layer and insulating layer into a single semiconductor layer structure. This consolidation eliminates the need for separate insulating layer fabrication steps, reducing fabrication complexity while maintaining both photoelectric detection performance and electrical insulation requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly reduces dark current uniformity and improves detection efficiency, achieving better signal transmission and accuracy with reduced power consumption and fabrication complexity.
Implementation Method 1
a semiconductor layer covering the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm
Data Source
AI summary
The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.