Solid-State Devices TRIZ Cases

Recessed word line sidewalls isolate vertical conductive structures, enabling random access in high-density 3D NOR memory.

A driving substrate uses an overlapping electrode layer to reduce film thickness in the bending area.

A quantum material layer converts organic light emitting unit radiation into sub-pixel colors via photoluminescence.

A radioisotope power source unit embedded within a semiconductor chip substrate converts emitted particles into electric power for electronic components.

A magnetic tunnel junction polarizer layer switches magnetization direction to reduce switching currents in MRAM devices.

Angled cavity walls and integrated heatsinks in solid state lighting packages enhance thermal management while reducing manufacturing bending forces.

Non-polar crystal growth eliminates built-in electric fields, resolving recombination efficiency losses that cause unstable color reproduction.

Segmenting and distributing gate drivers with decoupling capacitors reduces oscillations and energy losses, enabling faster switching speeds.

A graded bandgap perovskite solar cell architecture integrates a cationic diffusion barrier between distinct perovskite layers to enable stable tandem operation.

Vertical channel transistors in a dual-port SRAM separate read and write operations, resolving the disturb margin versus area usage tradeoff.

An LTCC chip carrier uses a protruding metal slug to expand the mounting area, lowering HTCC costs while maintaining thermal stability.

Segmenting fabrication stages allows high-temperature processing on rigid substrates, enabling high-speed TFTs for flexible electronics.

An OLED illumination module adjusts correlated color temperature and light intensity using a driving unit and optical sensing feedback loop.

A photoelectric conversion element uses a specific organic material and N-type semiconductor to generate electric power from indoor light sources.

Intermediate electrodes protect variable resistance layers from etching damage and hydrogen permeation, maintaining stable resistance characteristics.

Alkali treatment neutralizes the channel region of an organic thin film transistor gate insulator to improve electrical conductivity.

A semiconductor light-emitting device uses a cavity to isolate wavelength converting material from encapsulating resin.

Chemical mechanical polishing levels metal layers to define electrically isolated regions for resistors and capacitors on semiconductor substrates.

Conical structures on a flexible substrate guide photons vertically, reducing lateral light spreading and improving image quality in bent detection systems.

Specific rapid thermal annealing temperature profiles combined with sacrificial oxidation inhibit bulk micro defect density while reducing surface roughness.

Segmented charge trapping patterns resolve integration and manufacturing precision contradictions in vertical memory devices.

Controlled joint spacing in divided sputtering targets reduces luminance unevenness from particle generation at target joints.

Boron-containing indolocarbazole derivatives enhance luminous efficiency in organic electroluminescent devices.

A crystalline silicon film forms on a substrate with a specific thermal expansion coefficient to maintain total stress within a narrow range during laser irradiation.

A flat panel detection substrate uses a semiconductor layer thicker than 100 nm to contact bias and sense electrodes directly.

A solid-state image pickup device embeds conducting material in substrate holes to form contacts and alignment marks.

Tapering the reactive metal layer width creates gradual oxide growth that linearizes conductivity changes for better learning accuracy.

Variable thickness in the OLED first electrode blocks external light interference, enabling accurate photodiode sensing without complex structural changes.

Cavity inclined planes with distinct angles guide light convergence and position a Zener element to reduce electrostatic discharge risks in LED packages.

Segmented pillars with nested insulating films maintain electrical isolation between conductive layers while improving storage density.

Oblique facet planes on the substrate enable flat surface formation, improving crystallinity and reproducibility.

Thermal curing and melting of metallic adhesive liquid enables reliable micro light-emitting diode transfer without strict gap control.

Varying metal contact materials, shapes, and dimensions on a single chip enables multiple frequency coupling while maintaining standard manufacturing processes.

A semiconductor layout adds electrically isolated dummy patterns between adjacent cell tracks to enhance routing flexibility across stacked metal layers.

A resin layer with a lower refractive index covers the substrate side surface, reducing total internal reflection and light loss at the interface.

A conductive metal ink composition enables uniform roll printing of fine patterns with precise line widths.

Cover tape buffers flexible circuit films against external pressure and metal burrs, preventing wiring damage while maintaining compact device thickness.

A ferroelectric memory device incorporates a two-dimensional electron gas channel to maintain high reading currents.

Embedding functionalized carbon nanotubes in an insulating matrix creates a stable hole conduction layer that maintains high mobility under thermal stress.

Replacing wet etching with field-effect isolation reduces production costs while suppressing leakage current through increased resistance.

Nano-pit array reduces total reflection and incident angle, resolving waveguide mode losses in integrated light-emitting devices.

Extending dummy gates parallel to active electrodes controls shape fluctuation while reducing layout area and design time.

Cyclic structure curable compounds combined with oxetane groups create a sealing layer that blocks moisture and oxygen in organic electronic devices.

Segmented air layers disperse pressure across the image sensor, reducing optical crosstalk while preventing structural collapse.

Curved metal wirings in a touch control structure reduce blocking area to increase light transmittance, resolving glare issues for under-screen cameras.

Alternating tensile and compressive insulating films balance diaphragm stress, preventing deflection and maintaining detection accuracy.

Replacing parallel interconnect resources with serial links reduces device area and power consumption in programmable logic devices.

A backside illumination image sensor integrates a metal-based light blocking structure in the peripheral region to reduce stray reflections.

A stacked image sensor uses color separation elements to direct specific wavelength bands toward corresponding pixels in separate light sensing layers.

Time-sharing operation of touch detecting and display control units eliminates a separate touch-sensitive layer, enhancing transmittance.

Central openings and peripheral filtering in the color filter layer reduce chromaticity variations while maintaining high luminance.

A silicon carbide semiconductor device uses a high carbon concentration layer to enable direct metal bonding.

Silicon-containing oxide films replace lanthanum aluminate in nonvolatile memory block insulating layers, suppressing charge leakage caused by material defects.

A specific compound enhances electron transport in organic light emitting diodes.

Parallel resistive memory elements lower on-state resistance and variability, reducing operational current while maintaining data retention.

InAsSbN dilute nitride layers enable independent MWIR and LWIR sensing without cryogenic cooling or spectral cross-talk.

Segmented cryogenic implantation reduces crystal defects and fabrication costs while improving dopant activation in logic NMOS transistors.

Short vias eliminate air bridges and through-substrate connections, reducing manufacturing complexity while lowering on-resistance by five times.

A flexible substrate doped with n-type or p-type dopants adjusts its work function to match the supporting substrate.

A light emitting device package uses a refraction portion between the lens and the device to widen the viewing angle.

Annealing silicon germanium layers forms co-planar nanosheet channels, resolving topography issues in semiconductor devices.

A substrate processing apparatus cycles adsorption auxiliary, source, and reaction gases to form semiconductor thin films.

Dual-stage laser cutting removes carbide ash and cuts substrates, reducing defect rates and manufacturing time.

Multiple emissive layers distribute exciton formation across distinct regions to enhance internal quantum efficiency in organic light emitting devices.

Interposed reflectors and refractive layers redirect lateral emissions from adjacent LEDs, eliminating optical cross-talk that degrades color saturation.

A stacked chip architecture separates Single-Photon Avalanche Diode regions from digital counters to achieve high fill-factor arrays.

A display panel features a stepped groove structure between an opening and the display area to prevent moisture ingress.

A back-to-back display module integrates an integrated circuit on the rear substrate to control dual panels without a conventional printed board.

Segmented transparent connection layers enable uniform electrical conductivity across organic light-emitting diode surfaces.

Resin covering members enable singulation of ceramic-based boards, reducing warpage and component damage during light-emitting device manufacturing.

A monocrystalline silicon protection layer provides superior hydrophobicity to seal OLED organic layers against moisture and oxygen ingress.

Sliding and rotating support plates with elastic members maintain screen shape during expansion, preventing damage from user touch operations.

Stacked inorganic layers and dams seal transmission holes through substrates, preventing moisture ingress while maintaining signal exchange paths.

Segmented isolation regions in III-N transistors minimize short-circuit current and collect holes, extending survival time during high-voltage faults.

Deviation of magnetization direction from sense directions balances sensitivity and noise levels for precise e-compass measurements.

Optimizing HOMO energy levels in the emission layer reduces direct recombination and triplet exciton formation, extending device lifespan.

A resistive random access memory cell uses a vertically extended data storage layer to increase effective area without expanding lateral dimensions.

A split-gate nonvolatile memory device uses a segmented gate insulating film with silicon nitride charge storage layers to optimize data retention.

Segmented organic films with suppression regions prevent residual carriers from causing afterimages in solid-state imaging devices.

P-doped strap contacts eliminate oxide ring stripping difficulties while enhancing source select transistor performance.

Curved groove bottom disperses pressure during wafer dicing, preventing stress concentration and breakage at step portions.

A semiconductor chip directs radiation through side surfaces via a conversion layer applied to the growth substrate.

A radiation-emitting device uses partial electrode removal to create conductive interruptions that control current flow and vary light intensity.

Novolak-acryl photoresist composition maintains pattern profile angles during baking, preventing reflow defects in thin-film transistor substrates.

Openings in overlapping bridge structures decrease reflectivity, eliminating bright spots while maintaining electrical signal transfer.

Butyl-rubber welding layer seals scintillator module side surfaces, eliminating vacuum deposition costs.

An impurity layer diffuses into a non-stoichiometric metal oxide layer to prevent electrical resistance increases during oxidation.

A multifunctional electrode releases leakage current to a common electrode during image display, preventing unintended light emission and chromaticity changes.

Mesh-type wiring with transparent capping electrodes distributes stress across segmented blocks, preventing cracks in touch wirings during folding.

A segmented array substrate controls first and second sub-pixels via independent gate lines to widen the effective black matrix.

A resin sheet blocks suction pressure on MEMS devices, allowing secure chuck fixation without damaging sensitive components.

Fluorous solvent undercutting enables clean liftoff of conductive layers, preventing harsh chemical degradation of sensitive organic materials.

Standard cell layouts use preliminary pin patterns for routing flexibility, then shrink them based on hitting information to reduce parasitic capacitance.

A cross-linkable polymer forms stable organic thin layers via wet processing.

Segmented pixel electrodes prevent etchant deterioration during patterning to stabilize electric characteristics and enhance color reproducibility.

Dual spacers secure pad distances in stacked semiconductor devices, preventing bridge formation while maintaining operational reliability.

Magnetic tunnel junction cells estimate on-chip temperature via adjustable resistance values, reducing real estate allocation and power consumption.

A device with segmented electron transport layers using compounds with matched affinity values to move charge carriers efficiently.

Segmented charge storage regions capture pulse duration, wavelength, and intensity data to enable rapid sample identification without bulky external optics.