Stacked Semiconductor Device Spacer Design for Bridge Prevention
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Solution Overview
Problem
Three-dimensional non-volatile memory devices face challenges in improving operational reliability due to limitations in integration and manufacturing processes, particularly in maintaining the stability and characteristics of conductive layers and spacers within the device.
Innovation Solution
The semiconductor device employs a stacked structure with conductive layers and insulating layers, where spacers are used to secure appropriate distances between pads, preventing bridge formation and enhancing the reliability of the device. The manufacturing method involves forming first and second spacers to cover the conductive layers, ensuring the pads' thickness is greater than the lines, and using selective etching to expose the spacers for conductive layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conductive layers are stacked in a three-dimensional structure to improve integration, then device capacity increases, but bridge formation between conductive layers occurs reducing reliability
Solution Approach 1:
An insulating layer is introduced as an intermediary substance between the conductive layers to prevent direct contact and bridge formation. The insulating layer acts as a mediator that maintains electrical isolation while allowing the conductive layers to be positioned in close proximity for high integration density.
Solution Approach 2:
The harmful conductive material is extracted or removed from positions where it could form bridges between conductive layers. By selectively removing conductive material and replacing it with insulating material, the patent eliminates the bridge formation risk while preserving the stacked structure for high integration.
2Reliability
If spacer structures are added to prevent bridge formation and improve reliability, then operational reliability increases, but device structure becomes more complex
Solution Approach 1:
The insulating layer is merged with the existing stacked structure of conductive layers, forming an integrated multi-layer configuration. Rather than adding separate spacer components, the insulating function is combined into the layer stack itself, reducing overall structural complexity while maintaining reliability.
Solution Approach 2:
The insulating layer serves multiple functions simultaneously: it provides electrical isolation between conductive layers, acts as a structural spacer to maintain spacing, and contributes to the overall device architecture. This multi-functionality reduces the need for additional dedicated spacer structures.
3Stability of the object's composition
If multiple spacer layers are formed to stabilize conductive layer positions, then structural stability improves, but manufacturing process becomes more difficult
Solution Approach 1:
The insulating layer is formed preliminarily before the conductive layers are deposited, establishing the positional framework and spacing requirements in advance. This preliminary action guides subsequent manufacturing steps and ensures stable positioning without requiring complex post-processing adjustments.
Solution Approach 2:
The spacing function is segmented into discrete insulating layers positioned between conductive layers, rather than using continuous or complex spacer structures. This segmentation simplifies the manufacturing process by allowing each layer to be formed independently using standard deposition and etching techniques.
Data Source
AI summary
Provided herein is a semiconductor device. The semiconductor device may include conductive layers each including a line, and a pad which is coupled with the line and has a thickness greater than that of the line, the conductive layers being stacked such that the pads are exposed; insulating layers interposed between the conductive layers; first spacers each of which is interposed between the pad of the corresponding upper conductive layer and the pad of the corresponding low conductive layer; and second spacers covering the respective first spacers.