Semiconductor Gate Layout Design with Dummy Gate Extension
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Solution Overview
Problem
Conventional semiconductor device layout design methods that incorporate dummy gates to control fluctuation in transistor gate electrode shapes result in increased design time and area, due to restrictive design rules and the need for complex wiring, leading to reduced yield and efficiency.
Innovation Solution
The implementation of additional gate patterns that are formed in parallel with and at a fixed distance from the gate electrodes, with the ability to change shape and length, allowing for asynchronous connection and electrical connection to the gate electrodes, thereby reducing design constraints and area requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dummy gates are arranged at fixed intervals from gate electrodes to control shape fluctuation, then manufacturing precision of gate patterns is improved, but device complexity and design time increase
Solution Approach 1:
The patent extracts only the essential function of dummy gates (controlling shape fluctuation at gate electrode ends) and implements it through selective extension of gate patterns only where needed, rather than uniformly arranging dummy gates throughout the circuit. This reduces layout complexity while maintaining manufacturing precision.
Solution Approach 2:
Instead of adding separate dummy gate structures, the patent inverts the approach by extending the functional gate patterns themselves to serve dual purposes: both as operational gates and as shape-control elements. This eliminates the need for separate dummy structures and reduces overall design complexity.
2Manufacturing precision
If dummy gates are arranged to match the largest gate width, then manufacturing precision is improved, but area occupied increases
Solution Approach 1:
The patent applies local quality by extending gate patterns selectively only at locations where shape fluctuation occurs (at the ends of gate electrodes), rather than uniformly across all gate structures. The extension length and presence are locally adapted to each specific gate's geometric context, minimizing unnecessary area occupation while maintaining manufacturing precision.
Solution Approach 2:
The patent implements partial action by applying the shape-control mechanism only to gate electrodes that require it (those with adjacent transistors creating geometric disparities), rather than to all gates. This selective application reduces the total area occupied while still achieving the necessary manufacturing precision for affected structures.
3Manufacturing precision
If restrictive design rules are imposed on dummy gate arrangements, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent implements self-service by creating a system where gate patterns automatically serve their own shape-control function through selective extension. The extended gate patterns self-adapt to the local geometric context and automatically satisfy the shape-uniformity requirement without requiring separate dummy gate structures or complex external design rules, thereby improving productivity.
4Manufacturing precision
If complex wiring and contact arrangements are required for dummy gates, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent merges the functional gate pattern and the shape-control dummy gate into a single integrated structure. The extended gate pattern simultaneously serves as both the operational gate and the shape-control element, eliminating the need for separate wiring and contact arrangements that would be required for distinct dummy gate structures, thereby reducing overall device complexity.
Data Source
AI summary
A layout design method for a semiconductor device includes a step of arranging transistors, a dummy gate forming step of forming dummy gates, which has a shape identical with a shape including gate electrodes or the gate electrodes and projected parts from active regions of the gate electrodes, in positions in parallel with and a fixed distance apart from the gate electrodes arranged at both ends in a gate length direction on active regions of the transistors and, when the transistors have plural gate electrodes with different gate widths, extending the projected parts to the outside of the active regions by a necessary length, a gate connecting step of, when gate patterns and contact regions are connected to the gate electrodes of the transistors, connecting the gate electrodes and the dummy gates according to a positional relation between the gate electrodes and the dummy gates, and a wiring step of wiring a metal layer. It is possible to design a semiconductor device having a smaller area than that in the past and with a less design man-hour.