Element Isolation Electrode for Semiconductor Leakage Suppression
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Solution Overview
Problem
Current methods for element isolation in semiconductor electronic devices, such as thin film transistors (TFTs), face challenges in achieving high process accuracy and reducing production costs, particularly when using wet etching or non-patterning techniques, which often compromise on resolution and throughput due to moisture sensitivity and increased costs associated with dry etching.
Innovation Solution
An electronic device with an element isolation region comprising a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, where the electrode is separated from the semiconductor film by the insulating film and applied with a voltage to increase the resistance of the semiconductor film, thereby electrically isolating the elements using an electric field effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching is employed for element isolation, then manufacturing precision is improved, but production cost increases due to expensive vacuum apparatus
Solution Approach 1:
The patent replaces the mechanical/physical dry etching process with a chemical field-effect isolation mechanism. Instead of using vacuum apparatus and physical etching, the invention applies electric fields through insulating films to achieve element isolation, thereby eliminating expensive vacuum equipment while maintaining isolation precision
Solution Approach 2:
The invention changes the isolation mechanism from physical removal of material (etching) to electrical field control. By adjusting voltage parameters applied to the insulating films, the patent achieves effective element isolation without the need for precise mechanical etching processes
2Ease of manufacture
If wet etching is employed for element isolation, then production cost is reduced, but manufacturing precision deteriorates compared to dry etching
Solution Approach 1:
The patent substitutes both dry and wet etching processes with a field-effect isolation mechanism using insulating films and voltage application. This approach achieves high-precision element isolation through electrical control rather than chemical or physical etching, avoiding the precision limitations of wet etching while maintaining cost-effectiveness
3Reliability
If semiconductor film is patterned into island shapes for element isolation, then element isolation is achieved, but device complexity increases due to additional patterning processes
Solution Approach 1:
The patent extracts the isolation function from the semiconductor film patterning process itself. Instead of patterning the semiconductor into islands, the invention applies insulating films and electric fields to achieve isolation, thereby simplifying the overall device structure and reducing patterning process complexity while maintaining effective element isolation
Solution Approach 2:
The patent introduces insulating films as intermediary elements between adjacent semiconductor elements. These insulating films, when voltage is applied, create electric fields that isolate the elements without requiring the semiconductor film itself to be patterned into complex island shapes, thus reducing device complexity
4Reliability
If shadow mask is used for forming island-shaped channel regions, then element isolation is achieved, but manufacturing precision deteriorates further compared to wet etching
Solution Approach 1:
The patent replaces the shadow mask mechanical alignment process with a field-effect isolation mechanism using insulating films. This substitution eliminates the precision limitations inherent in shadow mask alignment while maintaining effective element isolation through electrical field control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances process accuracy and reduces costs by allowing finer formation of semiconductor electronic elements while maintaining effective electrical isolation, suppressing leakage current, and reducing power consumption.
Implementation Method 1
an element isolation electrode, which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another
Data Source
AI summary
An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.