Optoelectronic Semiconductor Component with Side-Emitting Conversion Layer
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Solution Overview
Problem
Current optoelectronic semiconductor components face challenges in achieving a compact, volume-emitting, and white-converting design that efficiently directs electromagnetic radiation while integrating protective electronic components without altering the optoelectronic properties during transfer.
Innovation Solution
The design incorporates an optoelectronic semiconductor chip with a growth substrate, a semiconductor layer sequence, contact points, an insulation layer, and a connection carrier that includes electronic components like ESD protective diodes, along with a conversion layer for wavelength conversion, allowing for efficient radiation emission and integration of electronic functions in a compact form factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the optoelectronic semiconductor chip is designed with a growth substrate and layer sequence for emitting electromagnetic radiation, then the optoelectronic properties are improved, but the device complexity increases due to the need for integrating connection carriers and electronic components
Solution Approach 1:
The connection carrier is integrated directly with the optoelectronic semiconductor chip, merging the functions of electrical connection, mechanical support, and electronic component housing into a single unified structure. This reduces the number of separate components while maintaining all necessary functions.
Solution Approach 2:
The connection carrier serves multiple functions simultaneously: it provides electrical connections through contact points, offers mechanical support for the chip, houses electronic components like ESD protective diodes, and facilitates mounting to printed circuit boards. This multi-functionality reduces overall device complexity.
2Ease of operation
If the connection carrier includes through connections for electrical contacting and mounting, then the ease of operation is improved, but the loss of energy increases due to potential light losses
Solution Approach 1:
The conversion layer is selectively applied only to specific regions of the growth substrate, particularly to areas where light extraction is most beneficial. This localized approach ensures that light conversion occurs where it is most effective while minimizing unnecessary material presence that could cause light losses.
Solution Approach 2:
The through connections are designed to extend completely through the connection carrier, providing both electrical contact and mechanical support in three dimensions. This vertical dimension allows for efficient mounting to printed circuit boards while maintaining optimal optical paths.
3Adaptability or versatility
If the conversion layer is applied to the growth substrate for wavelength conversion, then the adaptability is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The conversion layer is designed to convert electromagnetic radiation from one wavelength to another, enabling the same optoelectronic chip to serve multiple wavelength applications. This parameter change approach allows versatility without requiring multiple different chip designs.
4Productivity
If the optoelectronic semiconductor chip directs at least 30% of electromagnetic radiation through side surfaces, then the productivity is improved, but the device complexity increases due to the compact volume-emitting design
Solution Approach 1:
The design directs electromagnetic radiation not only in the conventional upward direction but also through the side surfaces of the growth substrate. This utilization of additional spatial dimensions (side surfaces) increases the total radiation output without requiring a larger device footprint.
Solution Approach 2:
The radiation emission is segmented into multiple pathways: radiation through the top surface and radiation through the side surfaces. This segmentation allows the compact device to achieve high total productivity by utilizing multiple emission channels simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables a compact, high-efficiency optoelectronic semiconductor component that maintains optimal optoelectronic properties, directs at least 30% of electromagnetic radiation through side surfaces, and facilitates easy mounting on printed circuit boards, reducing light losses and enhancing the component's stability and functionality.
Implementation Method 1
a conversion layer for wavelength conversion, allowing for efficient radiation emission
Data Source
AI summary
The invention relates to an optoelectronic semiconductor component (1) comprising:—an optoelectronic semiconductor chip (2), comprising—a growth substrate (21) having a growth surface (21a),—a layer sequence (22) with a semiconductor layer sequence (221, 222, 223) with an active zone (222) grown on the growth surface (21a),—contact points (29) for electrically contacting the semiconductor layer sequence (221, 222, 223) and—and insulation layer (26), which is formed in an electrically insulting manner—a connection carrier (4), which is mounted to the cover surface (2a) of the optoelectronic semiconductor chip facing away from the growth surface (21a), wherein—the semiconductor layer sequence (221, 222, 223) is connected to the connection carrier (4) in an electrically conducting manner and—a conversion layer (5) is applied to a bottom surface (21c) of the growth substrate (21) facing away from the growth surface (21a) and to all side surfaces (21b) of the growth substrate (21).