Semiconductor Thin Film Formation via Adsorption Auxiliary Gas
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Solution Overview
Problem
The CVD method for forming thin films in semiconductor devices faces issues with step coverage, leading to impurities and reduced productivity due to the need for lower temperatures, while the ALD method has a low film formation rate and productivity challenges.
Innovation Solution
A manufacturing method involving a substrate processing apparatus that uses a cycle of adsorption auxiliary gas, source gas, and reaction gas to form thin films, where the adsorption auxiliary gas aids the adsorption of the source gas, and the reaction gas cleans the surface, promoting film formation and improving step coverage and productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CVD method is used to form thin film, then step coverage is improved, but temperature must be lowered which causes carbon and oxygen impurities to remain in the film deteriorating electrical characteristics
Solution Approach 1:
The patent segments the film formation process into multiple sequential steps: (1) supplying adsorption auxiliary gas to prepare substrate surface, (2) supplying source gas to form adsorbed layer, (3) supplying reaction gas to form thin film. This segmentation allows each step to be optimized independently, achieving good step coverage while maintaining film purity by controlling temperature and gas sequences.
Solution Approach 2:
The patent applies preliminary action by supplying adsorption auxiliary gas (such as oxygen-containing gas) before supplying the source gas. This preliminary step prepares the substrate surface by forming an adsorbed layer that facilitates subsequent source gas adsorption, enabling film formation at controlled temperatures without excessive impurity incorporation.
2Manufacturing precision
If ALD method is used to form thin film, then film formation with desired thickness is achieved, but film formation rate is low and productivity is deteriorated
Solution Approach 1:
The patent implements continuity of useful action by optimizing the sequential gas supply process to eliminate idle time between steps. The adsorption auxiliary gas preparation, source gas adsorption, and reaction gas processing steps are continuously optimized to maintain film formation while reducing total cycle time, thereby increasing film formation rate without sacrificing thickness control.
Solution Approach 2:
The patent applies parameter changes by adjusting temperature, pressure, and gas flow rates to optimize the film formation process. By carefully controlling these parameters during each sequential step, the patent achieves both precise film thickness control and improved film formation rate, resolving the productivity issue of conventional ALD methods.
3Manufacturing precision
If temperature is lowered to improve step coverage in CVD method, then step coverage is improved, but incubation time is increased and productivity is deteriorated
Solution Approach 1:
The patent applies preliminary action by supplying adsorption auxiliary gas to prepare the substrate surface before source gas introduction. This preliminary surface preparation reduces the incubation time required for proper film nucleation and growth, allowing the process to proceed efficiently at lower temperatures while maintaining good step coverage.
Solution Approach 2:
The adsorption auxiliary gas acts as an intermediary that facilitates the interaction between the substrate and source gas. By introducing this intermediate step, the patent enables more efficient film formation at lower temperatures, reducing the time required for proper film development while maintaining excellent step coverage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances film formation rate and productivity by promoting the adsorption of source gases and cleaning the substrate surface, reducing impurities and improving electrical characteristics and adhesiveness of the thin films.
Implementation Method 1
supplying into the processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on the substrate
Implementation Method 2
supplying the source gas into the processing chamber, causing this source gas to react with the adsorption auxiliary gas on the substrate
Implementation Method 3
supplying a reaction gas into the processing chamber and causing this reaction gas to react with the source gas adsorbed on the substrate
Implementation Method 4
supplying into the processing chamber a ligand-decomposing gas that decomposes the ligand of a source gas vaporized from a liquid source
Data Source
AI summary
The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.The method comprises the steps of loading a substrate into a processing chamber; forming a thin film having a desired thickness on the substrate by setting as one cycle the step of supplying into the processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on the substrate and causing this adsorption auxiliary gas to be adsorbed on the substrate, the step of supplying the source gas into the processing chamber, causing the source gas to react with the adsorption auxiliary gas on the substrate, and causing this source gas to be adsorbed on the substrate, and the step of supplying a reaction gas into the processing chamber and causing this reaction gas to react with the source gas adsorbed on the substrate, and repeating this cycle a plurality of times; and unloading the substrate provided with the thin film from the inside of the processing chamber.