Nano-pit Array Light Extraction in Integrated LED Devices

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Solution Overview

Problem

The existing light-emitting devices have low light extraction efficiency due to limitations in waveguide mode and surface plasma mode, which is not effectively improved by current methods such as microcavity effect and Bragg reflector or photonic crystal structures.

Innovation Solution

An integrated light-emitting device is developed with a nano-pit array structure on the insulating layer adjacent to the second electrode, which acts as a light-condensing lens, reducing the incident angle and total reflection of light, thereby enhancing light extraction efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional methods (microcavity effect, Bragg reflector, photonic crystal structure) are used to improve light extraction rate, then light extraction efficiency is partially improved, but the improvement effect is not ideal and device complexity increases

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoiddevice structure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent employs a nano-pit array structure on the surface of the insulating layer, creating a porous/nanostructured surface that effectively traps and extracts light. This nano-pit array acts as an optical antenna array, converting waveguide-mode and surface plasma-mode light into free-space propagating light, thereby significantly improving light extraction efficiency without requiring complex multi-layer photonic crystal structures or Bragg reflectors

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The patent introduces a vertical dimension to light extraction by creating nano-pits that extend into the insulating layer from the surface. This vertical nanostructuring provides an additional dimension for light interaction, allowing light to be extracted not only in-plane but also through the vertical dimension, thereby improving overall extraction efficiency without increasing lateral device complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If vacuum thin film deposition technology is used for OFET manufacturing, then film formation uniformity and field effect mobility are improved, but light extraction rate remains limited by waveguide and surface plasma modes

Engineering Contradiction:
Improvefilm formation uniformityVSAvoidlight extraction rate
Core Design Contradiction:
Manufacturing precisionVSLoss of energy

Solution Approach 1:

The patent changes the optical parameters of the insulating layer surface by introducing a nano-pit array structure. This nanostructuring modifies the local density of optical states and changes the coupling conditions between waveguide modes and free-space modes, enabling efficient light extraction while maintaining the high film formation uniformity achieved through vacuum thin film deposition technology

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The nano-pit array structure significantly reduces light loss due to total reflection, leading to improved light extraction efficiency in the integrated light-emitting device.

Implementation Method 1

reducing the incident angle and total reflection of light

Methodology Applied
Scientific EffectTotal reflection: Total Internal Reflection

Implementation Method 2

a surface of the insulating layer adjacent to the second electrode is provided with a nano-pit array structure configured for condensing light

Methodology Applied
Scientific EffectLight condensing: Focusing

Data Source

PatentUS11659731B2Integrated light-emitting device and fabricating method thereof
Publication Date: 2023.05.23 TCL TECHNOLOGY GROUP CORPORATION
  • US11659731B2 patent drawing
  • US11659731B2 patent drawing
  • US11659731B2 patent drawing

AI summary

An integrated light-emitting device and a fabricating method thereof. The integrated light-emitting device includes a first electrode, an insulating layer, a second electrode, a light-emitting layer, and a third electrode which are sequentially laminated; the first electrode, the insulating layer, the second electrode, and the third electrode together constitute a field effect transistor unit, and the first electrode, the second electrode and the third electrode are respectively a gate, a source and a drain of the field effect transistor unit, and a surface of the insulating layer adjacent to the second electrode is provided with a nano-pit array structure configured for condensing light; and the second electrode, the light-emitting layer and the third electrode together constitute a light-emitting unit, the light-emitting unit configured to emit light toward the first electrode along the second electrode.