Radioisotope Power Source Embedded in Semiconductor Chip
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Solution Overview
Problem
Current technologies do not provide a satisfactory solution for embedding a radioisotope power source directly within a semiconductor chip alongside electronic components in electronic devices.
Innovation Solution
The integration of a radioisotope power source unit within a semiconductor chip, utilizing a radioisotope cavity and a conversion arrangement comprising PIN diodes and intrinsic semiconductor portions to absorb particles emitted by radioactive material and convert them into electric power, which is then supplied to electronic components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of moving object
If a radioisotope power source is embedded directly in a semiconductor chip, then power supply duration and reliability are improved, but manufacturing complexity and integration difficulty increase
Solution Approach 1:
The patent combines the radioisotope power source unit with the semiconductor chip into a single integrated structure. The power source unit is embedded within the chip substrate, sharing the same physical space and manufacturing process, thereby achieving long-duration power supply without proportionally increasing overall device complexity
Solution Approach 2:
The semiconductor chip serves multiple functions: it acts as both the electronic component carrier and the housing for the radioisotope power source. The chip substrate provides structural support, electrical isolation, and radiation shielding, eliminating the need for separate packaging components
2Reliability
If a radioisotope power source unit is embedded in the chip, then power reliability is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent modifies standard CMOS manufacturing parameters to accommodate radioisotope integration. Specific process steps are adjusted to handle radioactive materials, including modified deposition techniques for creating the power source unit and adjusted annealing temperatures to prevent radioactive material degradation while maintaining semiconductor performance
Solution Approach 2:
The patent introduces intermediary process steps and materials to facilitate integration. Specialized encapsulation layers and radiation shielding materials are inserted between standard manufacturing steps to protect sensitive components while allowing the radioisotope unit to be manufactured using adapted standard processes
3Power
If conversion arrangement with PIN diodes is used, then electric power conversion efficiency is improved, but device complexity and area increase
Solution Approach 1:
The conversion arrangement is segmented into multiple PIN diode units distributed across the chip. Each diode handles a portion of the power conversion, allowing for efficient energy harvesting while distributing the area requirement across multiple small, strategically placed components rather than requiring one large conversion area
Solution Approach 2:
The patent utilizes vertical stacking and three-dimensional integration to place the conversion arrangement in multiple layers above the radioisotope source. This dimensional approach allows efficient power conversion without proportionally increasing the chip's planar footprint, as components are arranged in the vertical dimension rather than only horizontally
4Power
If radioisotope material is placed close to electronic components, then power delivery is improved, but radiation effects on electronics increase
Solution Approach 1:
The patent applies different material properties and structural characteristics to different regions of the chip. Areas close to the radioisotope source have enhanced radiation shielding and reinforced transistor designs, while distant areas use standard configurations. This localized adaptation allows close placement for efficient power delivery while protecting sensitive electronics from radiation damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables a reliable and long-lasting power supply to electronic components, such as memory elements and MEMS components, with reduced parasitic radiation effects and improved data retention capabilities, while being compatible with standard CMOS and MEMS manufacturing processes.
Implementation Method 1
power sources based on a radioactive decay process of radioactive material, also identified as 'radioisotope power sources'
Implementation Method 2
absorb particles emitted by said radioactive material and convert them into electric power
Data Source
AI summary
An electronic device is proposed. The electronic device comprises: at least one electronic component formed in a chip of semiconductor material; at least one radioisotope power source unit comprising a radioactive material. The at least one radioisotope power source unit is embedded in the chip of semiconductor material together with the at least one electronic component. Moreover, the at least one radioisotope power source unit is arranged for providing electric power to said at least one electronic component by absorbing particles emitted by said radioactive material comprised in the least one radioisotope power source unit.