Invisible Light Flat Plate Detector with Direct Electrode Contact

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Solution Overview

Problem

Existing X-ray flat plate detectors face challenges in detection precision due to signal interference and complex manufacturing processes, particularly with the need for through holes and non-continuous electrodes, which affect the stability and transmission of electronic signals.

Innovation Solution

A design featuring detection units with a thin film transistor, a first insulation layer, a semiconductor photoelectronic conversion module, and a second electrode directly contacting the conversion module, with a first electrode connected via a through hole in the insulation layer, and optionally including additional electrodes and layers for improved signal stabilization and transmission, facilitating a simpler manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the second electrode is made to contact the semiconductor photoelectronic conversion layer through a through hole in the second insulation layer, then the electronic signal can be stabilized, but the manufacturing process becomes complex

Engineering Contradiction:
Improveelectronic signal stabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent removes the second insulation layer entirely, extracting the problematic element that required through holes. Instead of creating complex through-hole structures, the design directly contacts the semiconductor photoelectronic conversion layer with the second electrode, eliminating the need for the second insulation layer and its associated manufacturing complexity while maintaining signal stability.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Rather than creating through holes through the insulation layer to achieve contact (the conventional approach), the patent inverts the approach by removing the insulation layer entirely and making direct contact. This reversal of the conventional design methodology solves the contradiction by eliminating the need for complex through-hole formation processes.

Inventive Principle:
Principle #13The other way round (Inversion)

2Device complexity

If the first electrode and second electrode are arranged in the same layer, then the structure is simplified, but the electrodes are not continuous plate-like structures resulting in weak electronic signals

Engineering Contradiction:
Improveelectrode structure simplicityVSAvoidelectronic signal strength
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent transitions from a two-dimensional planar arrangement where both electrodes exist in the same layer to a three-dimensional stacked configuration. The first electrode remains in its original layer while the second electrode is positioned in a different layer after removing the second insulation layer, allowing both electrodes to be continuous plate-like structures that extend across the entire active area, thereby maintaining signal strength while achieving structural simplicity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of manufacture

If the PIN type photodiode and thin film transistor are arranged in parallel, then the manufacturing process is simplified, but there is strong interference between them affecting detection precision

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoiddetection precision
Core Design Contradiction:
Ease of manufactureVSMeasurement precision

Solution Approach 1:

The patent resolves the interference issue by transitioning from a two-dimensional parallel arrangement to a three-dimensional stacked configuration. The photodiode and thin film transistor are positioned in different layers vertically stacked above each other, which maintains manufacturing simplicity while eliminating lateral interference between the components, thereby improving detection precision.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration results in a compact, high-resolution X-ray flat plate detector with improved detection precision and reduced manufacturing complexity, eliminating the need for through holes and enhancing production efficiency.

Implementation Method 1

the semiconductor photoelectronic conversion module is configured to convert the visible light into an electronic signal

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

an invisible light conversion layer provided above the detection units for converting invisible light into visible light

Methodology Applied
Scientific EffectX-ray to visible light conversion: Photoelectric Effect

Data Source

PatentUS9705024B2Invisible light flat plate detector and manufacturing method thereof, imaging apparatus
Publication Date: 2017.07.11 BOE TECHNOLOGY GROUP CO LTD
  • US9705024B2 patent drawing
  • US9705024B2 patent drawing
  • US9705024B2 patent drawing

AI summary

The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field of detection technology, can solve problems that the structure of the invisible light flat plate detector in the prior art is complex and the manufacturing method thereof is tedious. The invisible light flat plate detector of the present invention comprises a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, each of the detection units comprising a thin film transistor provided on a substrate, and a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module, a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate.