Flexible Display Substrate Light Absorbing Layer for Laser Stripping
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Solution Overview
Problem
The performance of thin film transistors with metal oxide semiconductor active layers in flexible displays is compromised when the flexible substrate is stripped from a hard carrying substrate using laser irradiation, leading to increased off-state current and reduced yield.
Innovation Solution
Incorporating a light absorbing layer, such as an amorphous silicon layer, between the flexible substrate and the display elements or at the lower surface of the flexible substrate to absorb light energy during the stripping process, thereby minimizing its impact on the thin film transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If laser irradiation is used to strip the flexible substrate from the hard carrying substrate, then the flexible substrate can be successfully separated, but the light energy increases the off-state current of the thin film transistor, deteriorating its performance
Solution Approach 1:
A light absorbing layer is introduced as an intermediary component between the flexible substrate and the thin film transistor. This layer selectively absorbs laser light energy during the stripping process, preventing the light from directly reaching and affecting the metal oxide semiconductor active layer of the thin film transistor, thus protecting transistor performance while enabling successful substrate separation
Solution Approach 2:
The harmful light energy from laser irradiation is converted into a beneficial effect by using the light absorbing layer to convert the laser energy into thermal energy or other forms that do not affect the transistor. The previously harmful light exposure is transformed into a controlled energy absorption process that protects the sensitive semiconductor material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The light absorbing layer effectively reduces the influence of light energy on the thin film transistor, improving the yield and performance of the flexible display substrate by absorbing laser energy during the stripping process.
Implementation Method 1
a light absorbing layer arranged at a lower surface of the flexible substrate or arranged between the flexible substrate and the plurality of display elements
Data Source
AI summary
The embodiments of the present invention provide a flexible display substrate and a manufacturing method thereof, as well as a flexible display device, which relate to the technical field of display, and can avoid the performance of the thin film transistor from being influenced by light energy when a flexible substrate is striped from a carrying substrate. The method for manufacturing the flexible display substrate may comprise: forming a flexible substrate on a carrying substrate; forming a first buffer layer on the flexible substrate; forming a plurality of display elements on the first buffer layer, each of the plurality of display elements comprising a thin film transistor and an electrode structure, the thin film transistor comprising a metal oxide semiconductor active layer; stripping the flexible substrate from the carrying substrate, wherein the method further comprises: forming a light absorbing layer before the plurality of display elements are formed.