Flexible Interconnect Layer for Low-Profile Image Sensor
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Solution Overview
Problem
The existing manufacturing process for camera modules in electronic devices is inefficient and time-consuming due to manual assembly and individual testing, and the inclusion of an infrared filter can increase device thickness, which is undesirable for mobile applications.
Innovation Solution
An image sensor device with a flexible interconnect layer and encapsulation material that surrounds the image sensor IC, allowing for a low-profile design without increasing device height, and a method of manufacturing that includes forming an interconnect layer with an opening for the image sensor IC and IR filter, followed by encapsulation and attachment of a flexible interconnect layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an infrared filter is attached over the image sensor IC, then infrared filtering capability is improved, but device thickness increases
Solution Approach 1:
The infrared filter is integrated within the encapsulation material structure, nesting the filtering function inside the existing protective housing rather than adding a separate external layer. This allows the filter to be accommodated within the encapsulation volume, avoiding additional thickness while maintaining infrared filtering capability.
Solution Approach 2:
The infrared filter is positioned in the lateral dimension within the encapsulation material rather than extending the thickness dimension. By placing the filter laterally surrounded by encapsulation material, the design shifts the filter placement to a different spatial dimension, achieving filtering without increasing overall device thickness.
2Ease of operation
If manual assembly and individual testing are used for camera module manufacturing, then assembly flexibility is maintained, but manufacturing time increases
Solution Approach 1:
Multiple camera modules are assembled and tested together in a single integrated process rather than individually. The image sensor ICs are mounted on a common substrate with shared interconnect layers, allowing simultaneous assembly and testing of multiple units, which maintains operational flexibility while dramatically reducing total manufacturing time.
Solution Approach 2:
The interconnect layers and substrate structures are prepared in advance with pre-formed openings and alignment features, allowing image sensor ICs to be quickly installed without time-consuming alignment procedures. This preliminary preparation of the mounting structure enables rapid assembly while maintaining precision.
3Reliability
If through-silicon via technology is used for electrical connectivity, then connection reliability is improved, but manufacturing cost increases
Solution Approach 1:
The electrical connection path is extracted from the through-silicon via approach and replaced with lateral interconnect layers that route signals through the substrate plane. By removing the need for vertical through-silicon vias and using planar interconnect structures instead, the design achieves reliable electrical connectivity without the high manufacturing costs associated with through-silicon via technology.
Data Source
AI summary
An image sensor device may include an interconnect layer having an opening extending therethrough, an image sensor IC within the opening and having an image sensing surface, and an IR filter aligned with the image sensing surface. The image sensor device may include an encapsulation material laterally surrounding the image sensor IC and filling the opening, and a flexible interconnect layer coupled to the interconnect layer opposite the image sensing surface.