Solid-State Devices TRIZ Cases

Segmented pixel arrangement reduces drive current and extends lifetime by increasing sub-pixel area.

Independent cathode thicknesses match luminance distributions across subpixels to reduce white off-angle color shift while maintaining optical efficiency.

Segmented microstructures refract and scatter light to break the Lambertian profile, increasing directional intensity while managing manufacturing complexity.

An embedded sensor chip within a host substrate aperture reduces assembly difficulty while enabling higher pixel density and increased I/O connections.

A transparent cover film layer with progressively decreasing thickness in the bending region deflects light toward the intermediate area.

A curved lower surface in the dielectric grid opening acts as a lens to focus radiation onto pixel sensors.

A polarization plate blocks external light reflection from peripheral wiring lines, preventing image quality degradation in the display area.

Multi-layered organic structure with charge generating layers enhances light emission efficiency in display devices.

Stoichiometric gradients in phase change materials improve memory retention and electrode adhesion, addressing inefficiencies in uniform composition structures.

An annular first touch electrode paired with insulated second electrodes arranged along a circumferential direction to form a capacitive sensing structure.

Fabricating nanostructures near the active region induces strain that red-shifts emission, addressing green gap efficiency drops.

A boss layer elevates the second electrode to reduce connection electrode thickness in electroluminescent devices.

Jogged spacer structures eliminate parallel masking steps by enabling self-aligned drain contacts in NOR flash memory arrays.

A light emitting device package uses a recess to house a Zener diode below the reflective cups.

Conformal filler deposition in gate recesses prevents void formation, protecting structures during hardmask removal and improving yield.

Interlayer insulating trenches define optical cavity depths, enabling coplanar transparent electrodes and reducing pressure damage during substrate attachment.

A wavy line extends through opening patterns in a flexible display insulating layer to distribute stress and prevent wire damage during bending.

Dual-function contact members reduce etching masks while a recessed tip geometry improves electric field focus for reliable RRAM operation.

Apertures in the second substrate route bond wires through holes, reducing package height for slim mobile devices.

Aromatic heterocyclic blocking layer confines triplet excitons within the emitting layer to enable efficient singlet generation.

Integrating sensing circuits on the MEMS substrate eliminates parasitic effects from separate junctions, reducing production complexity.

Oxygen-deficient transparent electrodes reduce contact resistance and prevent peeling during wire bonding on p-type gallium nitride layers.

A solid-state imaging device uses a conductive member embedded in a support substrate through hole to electrically connect the electrode.

Liquid thermosetting resin fills gaps via capillarity during bonding, preventing voids and thermal stress breakage in electronic assemblies.

Bit line clamp transistors configured with lower threshold voltages selectively boost channel currents in NAND memory strings during sensing operations.

A display device uses a light selective filter with liquid crystal and color layers to manage optical transmission.

Extending gate strips via a jog design reduces shallow trench isolation area requirements while maintaining device isolation reliability.

A light-emitting device electrode structure uses a barrier layer between bonding and conductive layers to enhance conductivity.

A triclinic MSi2N2O2 phosphor emits light between green and yellow bands using controlled Ca, Sr, and Eu molar ratios.

Air gap layers between insulating layers reduce interline capacitance in stacked semiconductor memory devices.

Vertically offset electrode regions enhance light emission efficiency and contact resistance by separating conductivity layers.

Surface grooves in adhesive films exhaust air bubbles during lamination to ensure robust encapsulation of organic electronic devices.

Master chip generates control signals for stacked slave memory devices, resolving reliability issues from sub-50nm scaling.

A second sealing layer covered by filler suppresses moisture infiltration in organic electroluminescence devices.

A switchable optical assembly reconfigures top-emitting electroluminescent displays between directional and non-directional viewing modes.

Segmenting chip and wiring substrates improves fabrication yield by allowing defect correction before final assembly.

Metal nitride etch stop structures protect dielectric pillars during ReRAM manufacturing while enabling vertical bit line formation.

A light emitting diode device orients its semiconductor junction perpendicular to the mounting surface to redirect primary emission sideways.

An AlN/Al2O3 distributed Bragg reflector maintains over 90% reflectivity across the visible spectrum, resolving low efficiency in white light emission.

A rewiring structure electrically connects contact points to connection points on an optoelectronic semiconductor chip.

Subpixel segmentation and layered color filters block rear viewing angles, preventing privacy leakage from sensitive information displayed on the screen.

Formula I and V organic compounds tune light emission wavelengths, resolving color saturation bottlenecks in full-color displays.

Circular tray with convex periphery and rear projection reduces vibration swings, preventing breakage of ultrathin wafers.

Encapsulation material surrounds the sensor IC and infrared filter within an opening, reducing device thickness while maintaining electrical connectivity.

Independent charge storage layers prevent electron diffusion in 3D stacked memory devices.

Pixel removal regions and laser ablation enhance sensor performance by resolving low light transmission in borderless displays.

A vertical ultraviolet light emitting device structure with optimized aluminum composition in the second conductive semiconductor layer.

Fluorine-doped silicon pillars terminate dangling bonds in stacked memory structures, resolving low electron mobility caused by poly-crystalline channels.

Segmenting the LED module into a high-reflectance submount and standard module substrate resolves reflectance trade-offs while simplifying fabrication.