Vertical UV LED Aluminum Composition Control
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Solution Overview
Problem
The challenge lies in developing a vertical ultraviolet light emitting device with enhanced optical output power, as existing technologies face difficulties in implementing ultraviolet light emitting devices vertically and suffer from decreased crystallinity during substrate separation.
Innovation Solution
A semiconductor device structure comprising a light emitting structure with a first and second conductive semiconductor layer and an active layer, where the second conductive semiconductor layer has a specific aluminum composition ratio and dopant distribution to optimize ultraviolet light emission, enabling vertical device configuration and improved optical output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If ultraviolet light emitting devices are implemented vertically, then device integration and space utilization are improved, but crystallinity decreases during substrate separation
Solution Approach 1:
The device is segmented into distinct functional layers including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer with specific aluminum composition ratios. This segmentation allows the vertical structure to maintain crystallinity in each layer while achieving the desired vertical configuration for UV light emission.
Solution Approach 2:
The second conductive semiconductor layer is designed with a specific aluminum composition ratio (AlxGa1-xN where 0.4 ≤ x ≤ 0.7) that differs from other layers. This local quality variation optimizes both the vertical device configuration and maintains crystallinity by creating appropriate lattice matching conditions in the critical emission region.
2Power
If aluminum composition is increased in the second conductive semiconductor layer, then ultraviolet light emission efficiency is improved, but contact resistance with the electrode increases
Solution Approach 1:
The aluminum composition ratio (x) in the second conductive semiconductor layer (AlxGa1-xN) is precisely controlled within the range 0.4 ≤ x ≤ 0.7. This parameter optimization balances two competing requirements: higher aluminum content improves UV light emission efficiency, while maintaining adequate electrical conductivity for low contact resistance with the electrode.
Solution Approach 2:
The device uses composite semiconductor materials with varying aluminum gallium nitride compositions across different layers. The second conductive semiconductor layer specifically uses AlxGa1-xN with 0.4 ≤ x ≤ 0.7 to achieve a composite structure that simultaneously provides high optical output power and low contact resistance through optimized material composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of a vertical ultraviolet light emitting device with enhanced optical output power and maintains crystallinity, addressing the limitations of existing technologies.
Implementation Method 1
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer
Data Source
AI summary
An embodiment discloses a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, and a semiconductor device package including the same. The second conductive semiconductor layer includes a first surface on which the second electrode is disposed. The second conductive semiconductor layer has a ratio of a second shortest distance W2, which is a distance from the first surface to a second point, to a first shortest distance W1, which is a distance from the first surface to a first point, (W2:W1) ranging from 1:1.25 to 1:100. The first point is a point at which the second conductive semiconductor layer has the same aluminum composition as a well layer of the active layer closest to the second conductive semiconductor layer. The second point is a point at which the second conductive semiconductor layer has the same dopant composition as the aluminum composition.