Optoelectronic Semiconductor Chip Rewiring Structure
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Solution Overview
Problem
The miniaturization of optoelectronic semiconductor chips with multiple emission regions is limited by the geometry of contact points, which restricts the separation and independent operation of these regions due to the fixed arrangement and size of contact points.
Innovation Solution
A rewiring structure is integrated into the semiconductor chip, allowing for the electrical connection of contact points to connection points via a lithography process, enabling independent operation of emission regions without the limitations imposed by the contact point geometry, and allowing for optimized soldering connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If contact points are arranged in a fixed geometry on the semiconductor body, then electrical contacting is simplified, but the miniaturization of emission regions is limited due to the fixed arrangement and size of contact points
Solution Approach 1:
The patent divides the electrical connection function into two separate components: contact points on the semiconductor body and connection points on the circuit board, linked by a rewiring structure. This segmentation allows the contact points to be small and closely spaced for miniaturized emission regions, while the connection points can be larger and optimally arranged for reliable electrical connection and heat dissipation.
Solution Approach 2:
The rewiring structure acts as an intermediary element between the contact points on the semiconductor body and the connection points on the circuit board. This intermediate layer decouples the geometric constraints of the semiconductor from those of the circuit board, allowing independent optimization of both sides without being limited by a fixed contact point geometry.
2Reliability
If contact points are made larger for reliable electrical connection, then electrical contacting reliability is improved, but the area available for emission regions is reduced
Solution Approach 1:
The patent separates the functions of electrical contact and reliable connection by introducing distinct contact points and connection points. The contact points can be minimized in size to preserve emission region area, while the connection points are optimized for reliability and heat dissipation. The rewiring structure bridges these two differently optimized components.
Solution Approach 2:
The rewiring structure extends the electrical connection path from the semiconductor body surface into the third dimension, allowing connection points to be positioned on the circuit board away from the semiconductor body footprint. This dimensional transition enables larger connection points for reliability without encroaching on the emission region area on the semiconductor surface.
3Productivity
If contact points are closely spaced for miniaturization, then emission region density is improved, but heat dissipation becomes more difficult due to limited space for heat sinks
Solution Approach 1:
The rewiring structure enables heat dissipation pathways to extend into the third dimension away from the densely packed contact points. Connection points can be positioned on the circuit board with adequate spacing for heat sinks and thermal management, while contact points remain closely spaced on the semiconductor body for high emission region density.
Solution Approach 2:
The rewiring structure serves as a thermal intermediary, conducting heat away from the densely spaced contact points on the semiconductor body to the connection points on the circuit board where heat dissipation structures can be effectively implemented, thus decoupling emission region density from heat dissipation constraints.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the miniaturization of emission regions without the constraints of contact point size and arrangement, facilitating reliable electrical contacting and improved heat dissipation, while allowing for a larger area allocation of connection points for enhanced reliability and efficiency.
Implementation Method 1
The semiconductor body is formed, for example, with a semiconductor compound material, for example, a III-V semiconductor compound material, and is designed to generate electromagnetic radiation during normal operation
Implementation Method 2
For example, the first and second contact points are applied to the semiconductor body by physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation or sputtering
Implementation Method 3
The rewiring structure comprises an electrically conductive rewiring of first type, an electrically conductive rewiring of second type and electrically insulating material
Data Source
AI summary
An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment, a chip includes a semiconductor body comprising a plurality of emission regions, first and second contact points, a rewiring structure and first and second connection points, wherein each emission region is contacted via the first and second contact points and configured to be operated separately from one another, wherein the rewiring structure electrically conductively connects each first contact point to an associated first connection point, wherein the rewiring structure electrically conductively connects every second contact point to an associated second connection point, wherein at least one of the connection points does not overlap with a contact point which is electrically conductively connected to this connection point in a vertical direction, and wherein each first connection point is disposed laterally directly adjacent to a further first connection point.