Flexible Redundancy Memory Device for Non-Volatile Data Storage
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Solution Overview
Problem
Non-volatile memory devices using fuses to store data face challenges with resistance degradation over time due to reverse EM effects, leading to erroneous reads, especially in critical data storage applications like firmware and security keys, and existing redundancy solutions increase area overhead and power consumption.
Innovation Solution
A memory device with built-in flexible redundancy is implemented, utilizing two adjacent columns of bit cells where each bit is stored in two cells, allowing for simultaneous read operations to ensure accurate data retrieval without the need for separate redundant memory devices, thereby reducing area overhead and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate redundant memory devices are used to ensure data accuracy, then read accuracy is improved, but area overhead and power consumption increase
Solution Approach 1:
The patent merges the redundant storage function into the same memory device by utilizing two adjacent columns of bit cells. The shared select circuit and reference circuit are used by both columns simultaneously, combining the redundancy function with the existing memory structure rather than using separate redundant devices. This reduces area overhead while maintaining read accuracy through dual-column comparison.
2Reliability
If separate redundant memory devices are used to ensure data accuracy, then read accuracy is improved, but power consumption increases
Solution Approach 1:
The patent combines the redundancy operation with the normal read operation by using the same select circuit and reference circuit for both columns. The shared circuits are activated simultaneously for dual-column reads, eliminating the need for separate redundant power supplies and reducing overall power consumption while maintaining accurate data retrieval through comparison of the two columns.
3Duration of action of stationary object
If fuse-based storage is used, then non-volatile data storage is achieved, but resistance degradation over time leads to erroneous reads
Solution Approach 1:
The patent implements a feedback mechanism by simultaneously reading from two adjacent columns and comparing the results. The select circuit generates bit values from both columns, and the reference circuit provides a reference for comparison. This feedback loop allows the system to detect and correct erroneous reads caused by fuse degradation, maintaining high read accuracy despite long-term data retention requirements.
Data Source
AI summary
A memory device with built-in flexible redundancy is provided according to various aspects of the present disclosure. In certain aspects, a memory device includes a first sense amplifier, a second sense amplifier, a first comparator, a second comparator, a reference circuit, and a logic gate. During a redundant read operation, the first sense amplifier, the first comparator, and the reference circuit are used to read one copy of a redundant bit stored in the memory device, and the second sense amplifier, the second comparator, and the reference circuit are used to read another copy of the redundant bit stored in the memory device. The logic gate may then determine a bit value based on the bit values of the read copies of the redundant bit (e.g., determine a bit value of one if the bit value of at least one of the read copies of the redundant bit is one).